AP3R303GMT-HF A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ SO-8 Compatible with Heatsink RDS(ON) 3.3mΩ ▼ Low On-resistance ID 105A ▼ RoHS Compliant

Description

ID@TC=25℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 ℃/W Data & specifications subject to change without notice 200810171 Total Power Dissipation 56.8 Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Total Power Dissipation 28.8 Thermal Data Parameter Gate-Source Voltage + 20 Continuous Drain Current3 31 Continuous Drain Current (Chip) Continuous Drain Current3 25 Pulsed Drain Current1 250 Parameter Rating Drain-Source Voltage 30 AP3R303GMT-HF Halogen-Free Product 105 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S The PMPAK 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. S S S G PMPAK 5x6 D D D D

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 3.3 m Ω VGS=4.5V, ID=20A - - 5 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=20A - 60 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA IGSS Gate-Source Leakage V GS=+20V - - + 100 nA Qg Total Gate Charge2 ID=30A - 13.3 21 nC Qgs Gate-Source Charge V DS=15V - 2.5 nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 7.2 nC td(on) Turn-on Delay Time2 VDS=15V - 8 - ns tr Rise Time I D=1A - 5.5 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 25 - ns tf Fall Time R D=15Ω -1 7- ns Ciss Input Capacitance V GS=0V - 1400 2240 pF Coss Output Capacitance V DS=25V - 440 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Rg Gate Resistance f=1.0MHz - 1.4 2.1 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=30A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 35 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 32 - nC Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state. 4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP3R303GMT-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP3R303GMT-HF 120 160 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 100 150 200 250 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0 V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =30A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2.8 3.6 4.4 5.2 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =20A T C =25 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP3R303GMT-HF 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =30A V DS =15V V DS =18V V DS =24V 400 800 1200 1600 2000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90%