AP3P2R2CDT A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -30V ▼ 100% Rg & UIS Test RDS(ON) 2.2mΩ ▼ Ultra Low On-resistance ID 4 -205A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy5 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 0.9 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range -55 to 150 Total Power Dissipation 138.8 245 -30 +20 -39.2 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current (Chip), VGS @ 10V4 -205 AP3P2R2CDT Rating Halogen-Free Product 201508241 -55 to 150 Drain Current3, VGS @ 10V -31.4 Pulsed Drain Current1 -200 AP3P2R2 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PDFN 5x6 package used advanced package and silicon combination for ultra low on-resistance and high efficiency, special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lowe r profile. G D S Bottom View Top View SSSG DD D D PDFN 5x6

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-20A - 1.3 2.2 m Ω VGS=-4.5V, ID=-20A - 2 3.2 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-5V, ID=-20A - 96 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-20A - 138 221 nC Qgs Gate-Source Charge V DS=-15V - 31 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 50 - nC td(on) Turn-on Delay Time V DS=-15V - 20 - ns tr Rise Time I D=-1A - 16 - ns td(off) Turn-off Delay Time R G=3.3Ω - 390 - ns tf Fall Time V GS=-10V - 200 - ns Ciss Input Capacitance V GS=0V - 17600 28160 pF Coss Output Capacitance V DS=-15V - 2100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 725 - pF Rg Gate Resistance f=1.0MHz - 4.2 8.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-20A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-20A, VGS=0V, - 50 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 60 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 4.Package limitation current is 100A . 5.Starting Tj=25oC , VDD=-30V , L=0.1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP3P2R2CDT 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.01E+09 Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 160 240 320 001122 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -7.0V -6.0V -5.0V V G = -4.0V T C =25 o C 120 160 200 001122 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C = 150o C -10V -7.0V -6.0V -5.0V V G = -4.0V 0.8 1.2 1.6 2.4 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -20 A T C =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -20A V G = -10V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) 0.1 100 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C I D = -1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 2.01E+09 Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Case Temperature 0 40 80 120 160 200 240 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -20 A V DS = -15V 4000 8000 12000 16000 20000 24000 1 5 9 13 17 21 25 29 33 37 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1000 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 120 160 200 240 25 50 75 100 125 150 T C , Case Temperature ( o C ) -ID , Drain Current (A) Limited by package 120 160 200 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A)T j =150 o C T j =25 o C V DS =-5V T j = -55 o C

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 120 160 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = -1mA 0 20 40 60 80 100 120 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 3P2R2C YWWSSS