AP3P010AMT A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS -30V ▼ Simple Drive Requirement RDS(ON) 10mΩ ▼ Fast Switching Characteristic ID -58A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 ℃/W -55 to 150 Drain Current3, VGS @ 10V -14.8 Pulsed Drain Current1 -200 28.8 Total Power Dissipation 201708291 -55 to 150 Rating Halogen-Free Product Parameter Drain-Source Voltage Gate-Source Voltage Drain Current 3, VGS @ 10V Drain Current, VGS @ 10V Drain Current, VGS @ 10V -30 +20 -18.5 -58 -37 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range AP3P010A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S S S G PMPAK® 5x6 D D D D G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-20A - - 10 m Ω VGS=-4.5V, ID=-12A - - 15 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-12A - 38 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-12A - 34 54.4 nC Qgs Gate-Source Charge V DS=-15V - 10 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 12 - nC td(on) Turn-on Delay Time V DS=-15V - 11 - ns tr Rise Time I D=-1A - 9 - ns td(off) Turn-off Delay Time R G=3.3Ω - 150 - ns tf Fall Time V GS=-10V - 70 - ns Ciss Input Capacitance V GS=0V - 3800 6080 pF Coss Output Capacitance V DS=-15V - 500 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 345 - pF Rg Gate Resistance f=1.0MHz - 9 18 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-20A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-12A, VGS=0V, - 24 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 4.Starting Tj=25oC , VDD=-30V , L=0.1mH , RG=25Ω, VGS=-10V THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec AP3P010AMT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.01E+09 Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 160 200 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -7.0V -6.0V -5.0V V G = -4.0V T C =25 o C 100 120 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C = 150o C -10V -7.0V -6.0V -5.0V V G = -4.0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -12 A T C =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -20A V G = -10V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) 0.1 100 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C I D = -250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 2011082301 Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Case Temperature 0 2 04 06 08 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -12 A V DS = -15V 2000 4000 6000 8000 1 5 9 13 17 21 25 29 33 37 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1000 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T C =25 o C Single Pulse 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T C , Case Temperature ( o C ) -ID , Drain Current (A) 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A)T j =150 o C T j =25 o C V DS = -5V T j = -55 o C

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = -1mA 0 1 02 03 04 05 06 0 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 3P010A YWWSSS