AP3N7R2MT A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 7.2mΩ ▼ Ultra Low On-resistance ID 47A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 4.8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 ℃/W Data and specifications subject to change without notice Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V3 Drain Current (Chip), VGS @ 10V -55 to 150 Pulsed Drain Current1 90 Storage Temperature Range 26Total Power Dissipation 28.8 -55 to 150 Drain Current, VGS @ 10V3 201509301 Parameter Total Power Dissipation3 Operating Junction Temperature Range Thermal Data Rating Halogen-Free Product +20 / -12 20.4 16.3 AP3N7R2 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. S S S G PMPAK® 5x6 D D D D G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 7.2 m Ω VGS=4.5V, ID=20A - - 11.5 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1.4 - 2.2 V gfs Forward Transconductance V DS=5V, ID=20A - 46 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=20V, VDS=0V - - 100 nA Qg Total Gate Charge I D=20A - 11 17.6 nC Qgs Gate-Source Charge V DS=15V - 6 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 2 - nC td(on) Turn-on Delay Time V DS=15V - 8 - ns tr Rise Time I D=20A - 66 - ns td(off) Turn-off Delay Time R G=3Ω -1 8- ns tf Fall Time V GS=10V - 8 - ns Ciss Input Capacitance V GS=0V - 1800 2880 pF Coss Output Capacitance V DS=15V - 410 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 20 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Source Current ( Body Diode ) - - 30 A VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=20A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 60oC/W at steady state. 4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP3N7R2MT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 160 200 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G = 4.0V T C =25 o C 100 120 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2 0A T C =25 o C 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V G =10V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) 0.1 100 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 0 4 8 12 16 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2 0A V DS =15V 400 800 1200 1600 2000 2400 1 5 9 13 17 21 25 29 33 37 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 100 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C Operation in this area limited by RDS(ON)

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA 0 1 02 03 04 05 06 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V

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