AP3N1R0MT A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 1.05mΩ ▼ Ultra Low On-resistance ID 4 245A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy5 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 ℃/W Data and specifications subject to change without notice Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V3 Drain Current (Chip), VGS @ 10V4 -55 to 150 Pulsed Drain Current1 650 Storage Temperature Range 104Total Power Dissipation 450 -55 to 150 Drain Current, VGS @ 10V3 201509041 Parameter Total Power Dissipation3 Operating Junction Temperature Range Thermal Data Rating Halogen-Free Product +20 54.2 43.3 245 AP3N1R0 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. S S S G PMPAK® 5x6 D D D D G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=10mA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 1.05 m Ω VGS=4.5V, ID=20A - - 1.4 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.9 - 2.2 V gfs Forward Transconductance V DS=10V, ID=20A - 135 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=20A - 75 120 nC Qgs Gate-Source Charge V DS=15V - 15 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 35 - nC td(on) Turn-on Delay Time V DS=15V - 18 - ns tr Rise Time I D=1A - 18 - ns td(off) Turn-off Delay Time R G=3.3Ω - 108 - ns tf Fall Time V GS=10V - 73 - ns Ciss Input Capacitance V GS=0V - 7700 12320 pF Coss Output Capacitance V DS=15V - 1330 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 710 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Source Current ( Body Diode ) - - 60 A VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=20A, VGS=0V, - 45 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 40 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 60oC/W at steady state. 4.Package limitation current is 100A . 5.Starting Tj=25oC , VDD=25V , L=1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP3N1R0MT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 160 200 0 0.2 0.4 0.6 0.8 1 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G = 4.0V T C =25 o C 120 160 000111 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.8 0.9 1.1 1.2 1.3 1.4 1.5 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2 0A T C =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V G =10V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) 0.1 100 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 0 2 04 06 08 0 1 0 0 1 2 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2 0A V DS =15V 2000 4000 6000 8000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1000 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC 100 150 200 250 300 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) Limited by package 120 160 200 012345 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C Operation in this area limited by RDS(ON)

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 100 120 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA 0 20 40 60 80 100 120 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 3N1R0 YWWSSS