AP3N035N A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 1.8V Gate Drive BVDSS 30V ▼ Lower Gate Charge RDS(ON) 35mΩ ▼ Fast Switching Performance ID 4.5A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 100 ℃/W Data and specifications subject to change without notice Thermal Data Parameter 201603231 Operating Junction Temperature Range -55 to 150 Drain Current3, VGS @ 10V 3.5 Pulsed Drain Current1 20 Storage Temperature Range Total Power Dissipation 1.25 -55 to 150 Gate-Source Voltage + 8 Drain Current3, VGS @ 10V 4.5 Parameter Rating Drain-Source Voltage 30 AP3N035N Halogen-Free Product AP3N035 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S SOT-23S G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=4.5A - - 35 m Ω VGS=2.5V, ID=2.6A - - 50 m Ω VGS=1.8V, ID=1A - - 80 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.3 - 1.2 V gfs Forward Transconductance V DS=5V, ID=5A - 24 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+8V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=5A - 9 14.4 nC Qgs Gate-Source Charge V DS=15V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 2 - nC td(on) Turn-on Delay Time V DS=15V - 5 - ns tr Rise Time I D=1A - 20 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 7- ns tf Fall Time V GS=5V - 19 - ns Ciss Input Capacitance V GS=0V - 800 1330 pF Coss Output Capacitance V DS=15V - 75 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10sec ; 300℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP3N035N

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 V GS , Gate-to-Source Voltage (V) RDSON (m I D =1A T A =25 o C 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =4.5A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.5 1.5 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 5.0V 4.5V 3.5V 2.5V V G =1.8V 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 5.0V 4.5V 3.5V 2.5V V G =1.8V I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Resistance Temperature 400 800 1200 1600 1 5 9 13 17 21 25 29 33 37 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 02468 1 0 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D = 5A V DS = 15V 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 300℃/W t T 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) 0.02 120 160 0 4 8 1 21 62 02 4 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =1.8V V GS =2.5V V GS =4.5V

Part Number : A13 A13SS Date Code : SS SS