AP3N018EYT A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Small Size & Lower Profile RDS(ON) 18mΩ ▼ RoHS Compliant & Halogen-Free ID 10.3A

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 7 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 40 ℃/W Data and specifications subject to change without notice 201608241 AP3N018EYT Rating Halogen-Free Product +20 10.3 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V3 -55 to 150 Drain Current, VGS @ 10V3 8.3 Pulsed Drain Current1 40 Storage Temperature Range 3.12 -55 to 150 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range D D D D S S S G PMPAK® 3 x 3 AP3N018E series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=10A - - 18 m Ω VGS=4.5V, ID=8A - - 30 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=10A - 23 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=8A - 7.5 12 nC Qgs Gate-Source Charge V DS=15V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 2.5 - nC td(on) Turn-on Delay Time V DS=15V - 7 - ns tr Rise Time I D=1A - 8 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 8- ns tf Fall Time V GS=10V - 3 - ns Ciss Input Capacitance V GS=0V - 840 1340 pF Coss Output Capacitance V DS=15V - 95 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.6A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=10A, VGS=0V,- 7 - n s Qrr Reverse Recovery Charge dI/dt=100A/µs - 1.5 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec; 210oC/W when mounted on min. copper pad. AP3N018EYT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 001122 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G = 4.0V T A =25 o C 001122 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =8A T A =25 ℃ 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =10A V G =10V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 048 1 2 1 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =8A V DS =15V 400 800 1200 1600 1 5 9 1 31 72 12 52 93 33 7 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthia=210 ℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) T j = -55 o C

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Fig 15. Typ. Drain-Source on State Resistance 100 0 1 02 03 04 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

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