AP3D2R6CMT

AP3D2R6CMT A-POWER | Alldatasheet

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Advanced Power ASYMMETRIC DUAL N-CHANNEL Electronics Corp. ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement CH-1 BV DSS 30V ▼ Easy for DC/DC Buck RDS(ON) 8.2mΩ Converter Application CH-2 BV DSS 30V ▼ RoHS Compliant & Halogen-Free RDS(ON) 2.4mΩ

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Units CH-2 VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 / -12 V ID@TC=25℃ Drain Current (Silicon Limited) 100 A ID@TA=25℃ Drain Current3 , VGS @ 10V 24.3 A ID@TA=70℃ Drain Current3 , VGS @ 10V 19.4 A IDM Pulsed Drain Current1 75 A PD@TA=25℃ Total Power Dissipation3 2.27 W TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ CH-2 Rthj-c 3 ℃/W Rthj-a 55 ℃/W Rthj-a 120 ℃/W -55 to 150 2.08 Maximum Thermal Resistance, Junction-ambient3 130 Thermal Data 201803021 Symbol CH-1 Rating UnitsParameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient4 -55 to 150 +20 / -12 AP3D2R6CMT 12.2 9.8 Rating CH-1 Halogen-Free Product Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. D2/S1 PMPAK® 5x6 D2/S1 D2/S1 D2/S1 The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters. The package provide optimal efficiency with low stray inductance and very low on- resistance. G1 D2/S1 D1 D1 G2 D2/S1 PMPAK 5x6 D2/S1

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=14A - - 8.2 m Ω VGS=4.5V, ID=7A - - 13 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 2.5 V gfs Forward Transconductance V DS=5V, ID=14A - 33 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - 100 nA Qg Total Gate Charge I D=7A - 7 11.2 nC Qgs Gate-Source Charge V DS=15V - 4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 1 - nC td(on) Turn-on Delay Time V DS=15V - 9 - ns tr ID=14A - 48 - ns td(off) Turn-off Delay Time R G=3Ω -1 7- ns tf Fall Time V GS=10V - 2 - ns Ciss Input Capacitance V GS=0V - 1200 1920 pF Coss Output Capacitance V DS=15V - 270 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Rg Gate Resistance f=1.0MHz - 1 2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=14A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=14A, VGS=0V - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC AP3D2R6CMT

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 2.4 m Ω VGS=4.5V, ID=12A - - 3 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1.1 - 2.5 V gfs Forward Transconductance V DS=5V, ID=20A - 86 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - 100 nA Qg Total Gate Charge I D=12A - 30 48 nC Qgs Gate-Source Charge V DS=15V - 11 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 6.5 - nC td(on) Turn-on Delay Time V DS=15V - 11 - ns tr Rise Time I D=20A - 64 - ns td(off) Turn-off Delay Time R G=3Ω -5 0- ns tf Fall Time V GS=10V - 14 - ns Ciss Input Capacitance V GS=0V - 4300 6880 pF Coss Output Capacitance V DS=15V - 1050 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 34 - pF Rg Gate Resistance f=1.0MHz - 1.7 3.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=20A, VGS=0V - 35 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 29 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, on steady-state 4.Surface mounted on Min. copper pad of FR4 board, on steady-state THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G =4.0V 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =14A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =7A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = 250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 0.01 0.1 100 0.01 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=130oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 4 8 12 16 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =7A V DS =15V 400 800 1200 1600 2000 1 5 9 1 31 72 12 52 93 33 7 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G =4.0V 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature (oC) Normalized RDS(ON) I D =20A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 1.4 1.8 2.2 2.6 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =12A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = 250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 0.01 0.1 100 0.01 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=120oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 1 02 03 04 05 06 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =12A V DS =15V 2000 4000 6000 8000 1 5 9 13 17 21 25 29 33 37 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Operation in this area limited by RDS(ON) 100 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 3D2R6C YWWSSS