AP3A010AM A-POWER | Alldatasheet

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Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Low On-resistance RDS(ON) 10.4mΩ ▼ Fast Switching Performance ID 10.8A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Drain Current, VGS @ 10V3 Halogen-Free Product Pulsed Drain Current1 40 Total Power Dissipation 2 -55 to 150 Parameter 10.8 201705051 Drain-Source Voltage 30 Gate-Source Voltage + 20 Storage Temperature Range Drain Current, VGS @ 10V3 8.7 AP3A010AM Parameter Rating 7.2 Operating Junction Temperature Range -55 to 150 Thermal Data SO-8 AP3A010A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for voltage conversion or switch applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=10A - - 10.4 m Ω VGS=4.5V, ID=5A - - 15.3 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=1mA 1.4 - 3 V gfs Forward Transconductance V DS=5V, ID=10A - 40 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=5A - 14 22.4 nC Qgs Gate-Source Charge V DS=15V - 4.4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 5.4 - nC td(on) Turn-on Delay Time V DS=15V - 9 - ns tr Rise Time I D=1A - 8 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 9- ns tf Fall Time V GS=10V - 9 - ns Ciss Input Capacitance V GS=0V - 1530 2448 pF Coss Output Capacitance V DS=15V - 225 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Rg Gate Resistance f=1.0MHz - 2.5 5 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=10A, VGS=0V, - 11 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. AP3A010AM

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G =4.0V T A = 150o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1 0A V G =1 0V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Total Power Dissipation Fig 12. Drain Current v.s. Ambient Temperature 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5A V DS =15V 250 450 650 850 1050 1250 1 5 9 1 31 72 12 52 93 33 7 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135℃/W t T Single Pulse 0.01 0.02 0.05 0.1 0.2 Duty factor=0.5 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) 0.5 1.5 2.5 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W)

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