AP3989I-HF_16 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V ▼ Fast Switching Characteristic RDS(ON) 0.68Ω ▼ Simple Drive Requirement ID 10A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data and specifications subject to change without notice Operating Junction Temperature Range -55 to 150 201501294 Thermal Data Parameter Storage Temperature Range Drain Current, VGS @ 10V 5 Pulsed Drain Current1 40 Total Power Dissipation 39 -55 to 150 Gate-Source Voltage + 30 Drain Current, VGS @ 10V 10 Parameter Rating Drain-Source Voltage 600 AP3989I-HF Halogen-Free Product G D S G D S TO-220CFM(I) AP3989 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-220CFM package is widely preferred for all commercial- industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 600 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=5A - - 0.68 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=5A - 4.5 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=9A - 43 77 nC Qgs Gate-Source Charge V DS=480V - 10 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 15 - nC td(on) Turn-on Delay Time V DD=300V - 20 - ns tr Rise Time I D=9A - 25 - ns td(off) Turn-off Delay Time R G=10Ω -6 0- ns tf Fall Time V GS=10V - 30 - ns Ciss Input Capacitance V GS=0V - 2150 3440 pF Coss Output Capacitance V DS=25V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 28 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=9A, VGS=0V - - 1.5 V trr Reverse Recovery Time I S=9A, VGS=0V - 640 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - uC Notes: 1.Pulse width limited by Max junction temperature. 2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP3989I-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7.0 V 6.0 V 5.0V V G = 4.0V V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10 V 7.0 V 6.0 V 5.0V V G =4.0 V 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =5A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 1 10 100 1000 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 1 02 03 04 05 06 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =9A V DS =480V 1000 2000 3000 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 10V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 3989I YWWSSS