AP3986I

AP3986I A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 620V ▼ Fast Switching Characteristic RDS(ON) 1.3Ω ▼ Simple Drive Requirement ID 6A

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data & specifications subject to change without notice AP3986I Parameter Rating 620 RoHS-compliant Product +30 36.8 3.3 201012082 -55 to 150 -55 to 150 G D S G D S TO-220CFM(I) AP3986 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 620 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=2.8A - - 1.3 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=3A - 2.8 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge3 ID=3A - 34 55 nC Qgs Gate-Source Charge V DS=300V - 6 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 15 - nC td(on) Turn-on Delay Time3 VDD=300V - 30 - ns tr Rise Time I D=3A - 32 - ns td(off) Turn-off Delay Time R G=50Ω,VGS=10V - 205 - ns tf Fall Time R D=100Ω -5 5- ns Ciss Input Capacitance V GS=0V - 1310 2100 pF Coss Output Capacitance V DS=25V - 210 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 35 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=3A, VGS=0V - - 1.3 V trr Reverse Recovery Time 3 IS=3A, VGS=0V - 400 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 4.2 - µC Notes: 1.Pulse width limited by max. junction temperature. 2.Starting T j=25oC , VDD=50V , L=1mH , RG=25Ω 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP3986I

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 6.0V V G =5.0V 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V V G =5.0V -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =2.8A V G =10V V SD , Source-to-Drain Voltage (V) IS (A) T j = 25 o CT j = 150 o C 0.4 0.6 0.8 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =3A V DS =300V 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON)