AP3800YT

AP3800YT A-POWER | Alldatasheet

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Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement CH-1 BV DSS 30V ▼ Easy for Synchronous Buck RDS(ON) 10.8mΩ Converter Application ID 3 10.3A ▼ RoHS Compliant & Halogen-Free CH-2 BV DSS 30V RDS(ON) 8.5mΩ Description ID 3 12.7A Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Units CH-2 VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage + 20 V ID@TC=25℃ Drain Current (Chip Limited) 44 A ID@TA=25℃ Drain Current3 , VGS @ 10V 12.7 A ID@TA=70℃ Drain Current3 , VGS @ 10V 10.2 A IDM Pulsed Drain Current1 40 A PD@TA=25℃ Total Power Dissipation3 2.2 W TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ CH-2 Rthj-c 4.5 ℃/W Rthj-a 55 ℃/W Rthj-a 145 ℃/W Data & specifications subject to change without notice -55 to 150 +20 AP3800YT 10.3 8.3 Rating CH-1 Halogen-Free Product Thermal Data 201504272 Symbol CH-1 Rating UnitsParameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient4 Maximum Thermal Resistance, Junction-ambient3 180 -55 to 150 1.9 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. D2/S1 The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters. PMPAK® 3 x 3 G2 S2 S2 S2 G1 D1 D1 D1 S1/D2

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=10A - 9 10.8 m Ω VGS=4.5V, ID=5A - 13 16 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 1.7 3 V gfs Forward Transconductance V DS=5V, ID=10A - 35 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=5A - 7.5 12 nC Qgs Gate-Source Charge V DS=24V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3 - nC td(on) Turn-on Delay Time V DS=15V - 6 - ns tr Rise Time I D=1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 7- ns tf Fall Time V GS=10V - 5 - ns Ciss Input Capacitance V GS=0V - 740 1184 pF Coss Output Capacitance V DS=25V - 105 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 1.8 3.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=10A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=10A, VGS=0V, - 12 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 5 - nC AP3800YT

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A - 6.5 8.5 m Ω VGS=4.5V, ID=6A - 8.9 12.9 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1.25 1.4 3 V gfs Forward Transconductance V DS=5V, ID=12A - 40 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=6A - 9.5 15.2 nC Qgs Gate-Source Charge V DS=24V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4.5 - nC td(on) Turn-on Delay Time V DS=15V - 8 - ns tr Rise Time I D=1A - 7 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 2- ns tf Fall Time V GS=10V - 13 - ns Ciss Input Capacitance V GS=0V - 910 1456 pF Coss Output Capacitance V DS=25V - 130 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF Rg Gate Resistance f=1.0MHz - 1.5 3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=12A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=12A, VGS=0V, - 12 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec. 4.Surface mounted on min. copper pad of FR4 board, on steady-state THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =10A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 0.01 0.1 100 0.01 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=180oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 048 1 2 1 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5A V DS =24V 200 400 600 800 1000 1 5 9 13 17 21 25 29 33 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V 4.0V V G =3.0V 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V 4.0V V G =3.0V 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature (oC) Normalized RDS(ON) I D =12A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =6A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 0.01 0.1 100 0.01 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=145oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 048 1 2 1 6 2 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6A V DS =24V 200 400 600 800 1000 1200 1 5 9 1 31 72 12 52 93 3 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 3800 YWWSSS