AP3602A BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Low Quiescent Current: 13µA Typical
  • Regulated Output V oltage Precision: 4%
  • High Output Current: 100mA when VIN≥3.0V 50mA when VIN≥2.7V
  • High Frequency: up to 1.2 MHz
  • Low Shutdown Supply Current: <1µA
  • High Output Peak Current: 250mA for 100ms
  • Over Temperature Protection
  • Operating Temperature Range: -40oC to 85oC

Applications

  • Mobile Phone Backlight Driver
  • Camera Flash LED Driver
  • MP3, MP4
  • Handheld Device
  • Portable Communication Device

Figure 1. Package Type of AP3602A/B

Figure 2. Pin Configuration of AP3602A/B (Top View)

1 VOUT

100mA REGULATED CHARGE PUMP AP3602A/B Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited Data Sheet SHDN VIN BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

Ordering Information

Package Temperature Range Part Number Marking ID Packing Type SOT-23-6 -40 to 85oC AP3602AKTR-E1 E7T Tape & Reel AP3602BKTR-E1 E8T Tape & Reel Circuit Type Package E1: Lead Free AP3602 TR: Tape and Reel K: SOT-23-6 Output V oltage B: 4.5V Functional Block Diagram GND Figure 3. Functional Block Diagram of AP3602A/B

100mA REGULATED CHARGE PUMP AP3602A/B Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited Data Sheet Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max- imum Ratings" for extended periods may affect device reliability. Parameter Symbol Min Max Unit Input V oltage VIN AP3602A 2.7 5 V AP3602B 2.7 4.5 Operating Temperature T A -40 85 oC Recommended Operating Conditions Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input V oltage V IN 7V Output V oltage V O 7V SHDN Pin V oltage V SHDN 7V Thermal Resistance (Junction to Ambient, no Heat sink) R θJA 300 oC/W Operating Junction Temperature T J 150 oC Storage Temperature Range T STG -65 to 150 oC Lead Temperature (Soldering, 10sec) T LEAD 260 oC ESD (Human Body Model) 2000 V

100mA REGULATED CHARGE PUMP AP3602A/B Apr. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet (CFLY=1µF, CIN=COUT=10µF, TA=25oC, unless otherwise specified.) For AP3602A Parameter Symbol Conditions Min Typ Max Unit Input V oltage V IN VO=5V 2.7 V O V Quiescent Current IQ VIN=2.7V to 5.0V , IO=0mA, VSHDN =VIN, Not Switching 13 30 µA Output V oltage VO 2.7V<VIN<5V , IO≤50mA 4.8 5.0 5.2 V 3.0V<VIN<5V , IO≤100mA 4.8 5.0 5.2 Shutdown Supply Current ISHDN 2.7V<VIN<3.6V , IO=0, VSHDN =0V 0.01 1 µA 3.6V<VIN<5.0V , IO=0, VSHDN =0V 2.5 Ripple V oltage VRIPPLE VIN=2.7V , IO=50mA 25 mVPP VIN=3V , IO=100mA 30 Efficiency η VIN=2.7V , IO=50mA 92 % Frequency f OSC Oscillator free running 1.2 MHz SHDN Input Threshold High VIH 1.4 V SHDN Input Threshold Low VIL 0.3 SHDN Input Current High I IH VSHDN =VIN -1 1 µA SHDN Input Current Low I IL VSHDN =GND -1 1 VOUT Turn-on Time t ON VIN=3V , IO=0mA 0.2 ms Short-Circuit Current I SC VIN=3V , VO=GND, VSHDN =3V 300 mA

Electrical Characteristics

100mA REGULATED CHARGE PUMP AP3602A/B Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited Data Sheet (CFLY=1µF, CIN=COUT=10µF, TA=25oC, unless otherwise specified.) For AP3602B Parameter Symbol Conditions Min Typ Max Unit Input V oltage V IN VO=4.5V 2.7 V O V Quiescent Current IQ VIN=2.7V to 4.5V , IO=0mA, VSHDN =VIN, Not Switching 13 30 µA Output V oltage VO V Shutdown Supply Current ISHDN 2.7V<VIN<3.6V , IO=0, VSHDN =0V 0.01 1 µA 3.6V<VIN<4.5V , IO=0, VSHDN =0V 2.5 Ripple V oltage VRIPPLE VIN=2.7V , IO=50mA 25 mVPP VIN=3V , IO=100mA 30 Efficiency η VIN=2.7V , IO=50mA 83 % Frequency f OSC Oscillator free running 1.2 MHz SHDN Input Threshold High VIH 1.4 V SHDN Input Threshold Low VIL 0.3 SHDN Input Current High I IH VSHDN =VIN -1 1 µA SHDN Input Current Low I IL VSHDN =0V -1 1 VOUT Turn-on Time t ON VIN=3V , IO=0mA 0.2 ms Short-Circuit Current I SC VIN=3V , VO=GND, VSHDN =3V 300 mA Electrical Characteristics (Continued)

100mA REGULATED CHARGE PUMP AP3602A/B Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited Data Sheet

Application Information

The AP3602A/B use a switched capacitor charge pump to boost the input voltage to a regulated output voltage. Regulation is achieved by sensing the chip output voltage through an internal resistor divider net- work. Controlled by an inte rnal comparator (refer to the functional block diagram), the charge pump circuit is enabled when the divided output voltage is below a preset trip point . The charge pump operates at 1.2MHz with 50% duty cycle. Conversion consists of a two-phase operation. In the first phase, switches S2 and S3 are opened and S1 and S4 are closed. During this time, C FLY charges to the voltage on V IN and load current is supplied by COUT. During the second phase, S2 and S3 are closed, and S1 and S4 are opened. This action connects C FLY low side to V IN, CFLY high side to V OUT, then a volt- age about 2*VIN is used to charge COUT and supply the load current. For each cycl e, charges is transported from VIN to VOUT to maintain the output voltage in its nominal value. This process breaks when the VOUT is high enough for the reason of higher input voltage or lower load, then the divided voltage at the control comparator exceeds the internal trip point high level, which compels the charge pump circuit enter to the idle mode in which the switching cycle stops (pulse skipping) and the output voltage is continually decr eased because it is main- tained by the discharging of C OUT only. In idle mode, the feedback circuit continues sensing V OUT. If the divided voltage at the control comparator drops below the preset trip point, the comparator will start the switching cycle again. In idle mode, the AP3602A/B's quiescent current is about 13µA. In shutdown mode, all internal circuitry is turned off and the AP3602A/ B draw only leakage cur- rent from V IN, which is less than 1 µA. So, the shut- down power loss for AP3602A/B is very low, that is beneficial to the battery supplied systems. Short Circuit and Thermal Protection The AP3602A/B have a thermal protection and shut- down circuit that continuously monitors the IC junc- tion temperature. When output short circuit o ccurs, the short circuit cur- rent is about 300mA (Typical). Under this condition, the I IN is about 2*Iout, which causes about 1.8W instant power dissipation on AP3602A/B, that will cause a rise in the internal IC junction temperature. If the thermal protection circuit senses the junction tem- perature exceeding approximately 160 oC, the thermal shutdown circuit will disable the charge pump switch- ing circuit. The thermal hysteresis is about 10oC, which means that the charge pump circuit can be active when the short circuit is removed and the junction tempera- ture drops below 150oC. The thermal shutdown protection will cycle on and off if an output short circuit condition persists. This will allow the AP3602A/B to operate on a short circuit con- dition without latch up or damage to the device.

Figure 27. VIH vs. VIN Figure 28. V IL vs. VIN

100mA REGULATED CHARGE PUMP AP3602A/B Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited Data Sheet Mechanical Dimensions SOT-23-6 Unit: mm(inch) 2.820(0.111) 3.020(0.119) 2.650(0.104) 2.950(0.116) 1.500(0.059) 1.700(0.067) 0.950(0.037)TYP 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.400(0.016) 0.700(0.028)REF 0.100(0.004) 0.200(0.008) 0.200(0.008) 0.300(0.012) 0.600(0.024) 0.000(0.000) 0.100(0.004) 1.050(0.041) 1.150(0.045) 1.050(0.041) 1.250(0.049) 123 456 Pin 1 Dot by Marking

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com