AP3586A,B,C BCDSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 17

Technical content

Features

  • Supply V oltage: 5V/12V
  • V IN Input Range: 3.3V to 12V
  • 0.6V/0.8V to 82% of VIN Output Range
  • Internal Reference: 0.6V/0.8V
  • Simple Single-loop Control
  • V oltage-mode PWM Control
  • Duty Cycle: 0% to 82%
  • Fast Transient Response
  • 10MHz High-bandwidth Error Amplifier with 6V/µs Slew Rate
  • Fixed Oscillator Frequency: 300kHz/200kHz
  • Lossless, Programmabl e Over Current Protection (Uses Lower MOSFET RDS(ON) )
  • Start-up into Pre-biased Load
  • Built-in Thermal Shutdown
  • Built-in Soft-start
  • Over Current Protection
  • Over V oltage Protection
  • Under V oltage Protection
  • Integrated Boot Diode

Applications

  • Subsystem Power Supplies
  • PCI, AGP, Graphics Cards, Digital TV
  • SSTL-2 and DDR/2/3 SDRAM Bus Termination Supply
  • Cable Modems, Set Top Boxes, and DSL Modems
  • Industrial Power Supplies and General Purpose Supplies

Figure 1. Package Types of AP3586A/B/C

Figure 2. Pin Configuration of AP3586A/B/C (Top View) Low-side Gate Driver Output and Over-Current Setting Input. “Function Description” for detail. Amplifier. Pull COMP pin low will shut down the IC. upper MOSFET has turned off. 9 Exposed Pad Exposed Pad as ground pin.

Figure 3. Functional Block Diagram of AP3586A/B/C

Single Phase Synchronous Buck PWM Controller AP3586A/B/C Mar. 2012 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

Ordering Information

Range Part Number Marking ID Packing Type AP3586AM-G1 3586AM-G1 Tube AP3586AMTR-G1 3586AM-G1 Tape & Reel AP3586BM-G1 3586BM-G1 Tube AP3586BMTR-G1 3586BM-G1 Tape & Reel AP3586CM-G1 3586CM-G1 Tube SOIC-8 AP3586CMTR-G1 3586CM-G1 Tape & Reel AP3586AMP-G1 3586AMP-G1 Tube AP3586AMPTR-G1 3586AMP-G1 Tape & Reel AP3586BMP-G1 3586BMP-G1 Tube AP3586BMPTR-G1 3586BMP-G1 Tape & Reel AP3586CMP-G1 3586CMP-G1 Tube PSOP-8 -40 to 85°C AP3586CMPTR-G1 3586CMP-G1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. G1: Green Blank: Tube TR: Tape & Reel Circuit Type A: AP3586A B: AP3586B C: AP3586C Package M: SOIC-8 MP: PSOP-8

Single Phase Synchronous Buck PWM Controller AP3586A/B/C Mar. 2012 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Input V oltage VCC -0.3 to 15 V BOOT V oltage VBOOT -0.3 to VPHASE +15 V UGATE to PHASE V oltage V UGATE -0.3 to 15 V PHASE, LGATE to GND V oltage VPHASE, VLGATE -1 to 15 V Other Pin V oltage -0.3 to 6 V Power Dissipation P D TBD mW Thermal Resistance θJA 50 ºC/W Operating Junction Temperature T J -40 to 125 ºC Storage Temperature T STG -65 to 150 ºC Lead Temperature (Soldering, 10 sec) T LEAD 260 ºC ESD (Human Body Model) (Note 2) 2000 V ESD (Machine Model) (Note 2) 200 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Co nditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Note 2: Devices are ESD sensitive. Handling precaution is recommended. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Input V oltage V CC 5 12 V Operating Ambient Temperature T A -40 85 °C

Single Phase Synchronous Buck PWM Controller AP3586A/B/C Mar. 2012 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

Electrical Characteristics

VCC=12V , TA=25°C, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit SUPPLY INPUT Supply Current ICC UGATE and LGATE Pins Open; Switching 5 mA Quiescent Supply Current ICC_Q VFB=VREF+0.1V , No Switching 4 mA Power Input V oltage V IN 3.0 13.2 V POWER ON RESET VCC Rising Threshold V POR V CC Rising 4.0 4.2 4.4 V VCC Threshold Hysteresis V POR_HYS 500 mV OSCILLATOR For AP3586A/B 270 300 330 kHz Oscillator Frequency fOSC For AP3586C 180 200 220 kHz Ramp Amplitude ∆VOSC 1.4 V P-P ERROR AMPLIFIER Open Loop DC Gain GDC_OL 55 70 dB Gain-bandwidth Product GBW 10 MHz Slew Rate SR 3 6 V/µs Transconductance 800 1100 µA/V Output Source Current VFB<VREF 80 120 µA Output Sink Current VFB>VREF 80 120 µA PWM CONTROLLER GATE DRIVERS Upper Gate Source Current IUG_SRC VBOOT-VPHASE=12V , VBOOT-VUGATE=6V -1.0 A Upper Gate Sink Current I UG_SNK VBOOT-VPHASE=12V , VBOOT-VUGATE=6V 1.5 A Upper Gate Sink Resistance RUGATE 50mA Source Current 2 4 Ω Lower Gate Source Current ILG_SRC V CC-VLGATE=6V -1 A Lower Gate Sink Current I LG_SNK V LGATE=6V 1.5 A Lower Gate Sink Resistance RLGATE 50mA Source Current 1 2 Ω PHASE Falling to LGATE Rising Delay V PHASE<1.2V to VLGATE>1.2V 50 ns LGATE Falling to UGATE Rising Delay VLGATE<1.2V to (VUGATE-VPHASE)>1.2V 50 ns

Single Phase Synchronous Buck PWM Controller AP3586A/B/C Mar. 2012 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) VCC=12V , TA=25ºC, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit Minimum Duty Cycle 0 % Maximum Duty Cycle 75 82 89 % REFERENCE VOLTAGE AP3586A 0.591 0.6 0.609 V Feedback V oltage V FB AP3586B/C 0.788 0.8 0.812 V Feedback Bias Current I FB V FB=5V 10 50 nA PROTECTION Under V oltage Protection V FB_UVP 0.3 0.4 0.5 V Over V oltage Protection V FB_OVP 1.1 V OC Current Source I OPS 19.5 21.5 23.5 µA Built-in Maximum OCP V oltage VOCP_MAX 0.3 V AP3586A 2 AP3586B 2.7 Soft-start Interval t SS AP3586C 3.6 ms Enable Threshold V COMP/EN 0.25 0.30 0.35 V Thermal Shutdown T OTSD 160 ºC Thermal Shutdown Hysteresis THYS 20 ºC

Figure 16. Typical Application Circuit of AP3586A/B/C

Single Phase Synchronous Buck PWM Controller AP3586A/B/C Mar. 2012 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Function Description (Continued) oscillator are turned off and UGATE and LGATE are driven low, turning off both MOSFETs. When the junction cools to the required level (140°C nominal), the PWM initiates soft start as during a normal power-up cycle. Output Voltage Selection The output voltage can be programmed to any level between the 0.6V internal reference (0.8V for AP3586B/C) to the 82% of V IN supply. The lower limitation of output voltage is caused by the internal reference. The upper limitation of the output voltage is caused by the maximum available duty cycle (82%). This is to leave enough time for over-current detection. Output voltage out of this range is not allowed. A voltage divider sets the output voltage (Refer to the typical application circuit) . In real applications, c h o o s e R 1 i n 1 0 0Ω to 10k Ω range and choose appropriate R2 according to the desired output voltage. AP3586A AP3586B/C PCB Layout Considerations High speed switching and relatively large peak currents in a synchronous -rectified buck converter make the PCB layout a very important part of design. Switching current from one power device to another can generate voltage spikes across the impedances of the interconnecting bond wires and circuit traces. The voltage spikes can degrade efficiency and radiate noise, that results in over-voltage stress on devices. Careful component placement layout a printed circuit design can minimize the voltage spikes induced in the converter. Follow the below layout guidelines for optimal performance of AP3586A/B/C. 1) The turn-off transition of the upper MOSFET prior to turn-off, the upper MOSFET was carrying the full load current. During turn-off, current stops flowing in the upper MOSFET and is picked up by the low side MOSFET. Any inductance in the switched path generates a large voltage spike during the switching interval. Careful component selections, layout of the critical components, and use shorter and wider PCB traces help in mini mizing the magnitude of voltage spikes. 2) The power components and the PWM controller should be placed fi rstly. Place the input capacitors, especially the high-frequency ceramic decoupling capacitors, close to the power switches. Place the output inductor and output capacitors between the MOSFETs and the load. Also locate the PWM controller near MOSFETs. 3) Use a dedicated grounding plane and use vias to ground all critical components to this layer. Use an immediate via to connect the component to ground plane including GND of AP3586A/B/C. 4) Apply another solid layer as a power plane and cut this plane into smaller islands of common voltage levels. The power plane should support the input power and output power nodes. Use copper filled polygons on the top and bottom circuit layers for the PHASE node. 5) The PHASE node is subject to very high dV/dt voltages. Stray capacitance between this island and the surrounding circuitry tend to induce current spike and capacitive noise coupling. Keep the sensitive circuit away from the PHASE node and keep the PCB area small to limit the capacitive coupling. However, the PCB area should be kept moderate since it also acts as main heat convection path of the lower MOSFET. 6) The PCB traces between the PWM controller and the gate of MOSFET and also the traces connecting source of MOSFETs should be sized to carry 2A peak currents. R2R10.6VVOUT +×= R2R10.8VVOUT +×=

Single Phase Synchronous Buck PWM Controller AP3586A/B/C Mar. 2012 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Mechanical Dimensions S O I C - 8 U n i t : m m ( i n c h ) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) Note: Eject hole, oriented hole and mold mark is optional.

Single Phase Synchronous Buck PWM Controller AP3586A/B/C Mar. 2012 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) P S O P - 8 U n i t : m m ( i n c h ) 3.202(0.126) 3.402(0.134)

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277