AP3408 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Input Voltage Range: 2.6 to 5.5V
  • Adjustable Output from 0.8 to 5V
  • 0.8V Reference Voltage with ± 2% Precision
  • Output Current: 2A
  • High Efficiency up to 95%
  • Low R DSON Internal Switches
  • Programmable Frequency: 300kHz to 4MHz
  • Current Mode Control
  • Forced Continuous-mode Operation
  • 100% Duty Cycle
  • Synchronizable Switching Frequency
  • Power Good Output V oltage Monitoring
  • Built-in Soft-start
  • Built-in Short Circuit Protection
  • Built-in Thermal Shutdown Protection
  • Built-in Current Limit Function

Applications

  • Portable Media Player
  • Digital Still and Video Cameras
  • Notebook

Figure 1. Package Types of AP3408

Figure 2. Pin Configuration of AP3408 (Top View)

2 SYNC

8 PGOOD

Figure 3. Functional Block Diagram of AP3408

P r e l i m i n a r y D a t a s h e e t 2A, 4MHz High Efficiency Syn c h r o n o u s B u c k C o n v e r t e r A P 3 4 0 8 J u l . 2 0 1 1 R e v . 1 . 0 BCD Semiconductor Manufacturing Limited

Ordering Information

G1: Green C i r c u i t T y p e Part Number Marking ID Package Temperature Range Green Green Packing Type DFN-3×3-10 AP3408DNTR-G1 BFA Tape & Reel AP3408MP-G1 3408MP-G1 Tube PSOP-8 -40 to 125°C AP3408MPTR-G1 3408MP-G1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit VDD Pin Voltage V DD -0.3 to 6 V PVDD Pin Voltage V PVDD -0.3 to 6 V FB Pin Voltage V FB -0.3 to 6 V COMP Pin Voltage V COMP -0.3 to 6 V SW Pin Voltage V SW -0.3 to V IN+0.3 V SHDN/RT Pin Voltage V SHDN/RT -0.3 to 6 V DFN-3×3-10 110 Thermal Resistance PSOP-8 θJA 75 ºC/W Operating Junction Temperature T J 150 ºC Storage Temperature T STG -65 to 150 ºC Lead Temperature (Soldering, 10 sec) T LEAD 260 ºC ESD (Machine Model) 200 V ESD (Human Body Model) 2000 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Co nditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. TR: Tape & Reel Blank: Tube Package DN: DFN-3×3-10 MP: PSOP-8

P r e l i m i n a r y D a t a s h e e t 2A, 4MHz High Efficiency Syn c h r o n o u s B u c k C o n v e r t e r A P 3 4 0 8 J u l . 2 0 1 1 R e v . 1 . 0 BCD Semiconductor Manufacturing Limited Recommended Operating Conditions Parameter Symbol Min Max Unit Input V oltage V IN 2.6 5.5 V Maximum Output Current I OUT (MAX) 2 A Operating Junction Temperature T J -40 125 ºC

Electrical Characteristics

VIN=VDD =VPVDD=3.3V, TA=25℃, unless otherwise specified. Parameters Symbol Conditions Min Typ Max Unit INPUT SECTION Input Voltage Range V DD 2.6 5.5 V Supply Current I Q VFB=0.75V, No Switching 460 μA Shutdown Supply Current I SHDN Shutdown, VIN=5.5V 1 μA Under Voltage Threshold Lockout VUVLO V DD Rising 2.2 V Under Voltage Hysteresis Lockout VHUVLO 300 mV FEEDBACK SECTION Feedback Voltage V FB 0.784 0.8 0.816 V FB Pin Bias Current I FB 0.1 0.4 μA Current Sense Transresistance R T 0.2 Ω Switching Leakage Current VSHDN/RT=VIN =5.5V 1 μA Error Gain Amplifier Voltage G V 800 Error1Amplifier1Trans-conductance G S 800 μA

P r e l i m i n a r y D a t a s h e e t 2A, 4MHz High Efficiency Syn c h r o n o u s B u c k C o n v e r t e r A P 3 4 0 8 J u l . 2 0 1 1 R e v . 1 . 0 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) VIN=VDD =VPVDD=3.3V, TA=25℃, unless otherwise specified. Parameters Symbol Conditions Min Typ Max Unit OSCILLATOR SECTION RT Pin Voltage V RT 0.8 V ROSC=330kΩ 0.8 1 1.2 MHz Switching Frequency f OSC ADJ Frequency 0.3 4 MHz Maximum Duty Cycle D MAX V FB=0.75V 100 % POWER SWITCH SECTION Switch Current Limit I LIMIT V FB=0.75V 2.2 3.8 A Internal P-FET On Resistance RPDSON I SW=500mA 0.11 0.16 Ω Internal N-FET On Resistance RNDSON I SW=-500mA 0.11 0.17 Ω SHDN/RT SECTION Shutdown Threshold VDD-0.7 V DD-0.4 V PGOOD SECTION PGOOD Voltage Range ±12.5 ±15 % PGOOD Pull Down Resistance 120 Ω TOTAL DEVICE Output Current I OUT VDD=2.6 to 5.5V VOUT=2.5V 2 A Output Voltage Line Regulation LNR VDD=2.7 to 5.5V IOUT=100mA 0.4 %/V Output Voltage Load Regulation LOD I OUT=0.01 to 2A ±0.2 % Soft-start Time t SS I OUT＝10mA 1.5 ms Thermal Shutdown Temperature TOTSD 160 ºC Thermal Shutdown Temperature Hysteresis THYS 20 ºC

Figure 12. Typical Application of AP3408

P r e l i m i n a r y D a t a s h e e t 2A, 4MHz High Efficiency Syn c h r o n o u s B u c k C o n v e r t e r A P 3 4 0 8 J u l . 2 0 1 1 R e v . 1 . 0 BCD Semiconductor Manufacturing Limited Mechanical Dimensions DFN-3×3-10 Unit: mm(inch) 2.900(0.114) 3.100(0.122) 2.900(0.114) 3.100(0.122) 1.600(0.063) 1.800(0.071) 0.200(0.008) 0.300(0.012) 0.500(0.020) TYP 0.300(0.012) 0.500(0.020) 0.000(0.000) 0.050(0.002) 0.700(0.028) 0.800(0.031) 0.153(0.006) 0.253(0.010) 2.300(0.090) 2.500(0.098) N1N5 N6 N10 PIN #1 IDENTIFICATIONPin 1 Dot by Marking

P r e l i m i n a r y D a t a s h e e t 2A, 4MHz High Efficiency Syn c h r o n o u s B u c k C o n v e r t e r A P 3 4 0 8 J u l . 2 0 1 1 R e v . 1 . 0 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) P S O P - 8 U n i t : m m ( i n c h ) 3.202(0.126) 3.402(0.134)

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277