AP3403GH A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low Gate Charge BVDSS -30V ▼ ▼ ▼ ▼ Simple Drive Requirement RDS(ON) 200mΩ ▼ ▼ ▼ ▼ Fast Switching ID - 10A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-case Thermal Resistance Junction-case Max. 3.4 ℃/W Rthj-amb Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice Pb Free Plating Product 200505031 AP3403GH/J Rating - 30 ± 20 -10 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current -8.6 Pulsed Drain Current 1 -48 36.7 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.29 Storage Temperature Range Thermal Data Parameter Total Power Dissipation Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. The TO-252/TO-251 package is universally used for all commercial- industrial application. G D S G D S TO-252(H) G D S TO-251(J)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 -V / ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-6A - - 200 mΩ VGS=-4.5V, ID=-4A - - 400 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-6A - 2 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=-6A - 3.8 - nC Qgs Gate-Source Charge V DS=-24V - 1.7 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 1.6 - nC td(on) Turn-on Delay Time2 VDS=-15V - 6.7 - ns tr Rise Time I D=-6A - 20.8 - ns td(off) Turn-off Delay Time R G=2Ω,VGS=-10V - 14.9 - ns tf Fall Time R D=2.5Ω - 4.4 - ns Ciss Input Capacitance V GS=0V - 217 - pF Coss Output Capacitance V DS=-25V - 103 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 31 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.25A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-6A, VGS=0V, - 35 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 63 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. AP3403GH/J ± 20V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C V G =-4.0V -6.0V -8.0V -10V -5.0V 100 150 200 250 3456789 1 0 1 1 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =-10A T c =25 ℃℃℃℃ 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G = -10V I D =-10A 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -10V -8.0V -6.0V V G =-4.0V -5.0V 100 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig11. Switching Time Circuit Fig 12. Gate Charge Circuit AP3403GH/J 100 1000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 0.5 x RATED VDS TO THE OSCILLOSCOPED G S VDS VGS IDIG -1~-3mA 0.5 x RATED VDS TO THE OSCILLOSCOPE -10 V D G S VDS VGS RG RD 0 2 4 6 8 10 12 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-10A V DS =-24V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse 100 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T c =25 o C Single Pulse DC 1ms 10ms 100ms