AP3402GEH A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 35V ▼ Single Drive Requirement RDS(ON) 18mΩ ▼ Surface Mount Package ID 38A ▼ RoHS Compliant

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 3.6 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 200420052-1/4 AP3402GEH/J Pb Free Plating Product Parameter Rating Drain-Source Voltage 35 Gate-Source Voltage ±20 Continuous Drain Current, V GS @ 10V 38 Continuous Drain Current, VGS @ 10V 24 Pulsed Drain Current1 110 Total Power Dissipation 34.7 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.27 Thermal Data Parameter Storage Temperature Range G D S TO-252(H) G D S TO-251(J) The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3402GEJ) are available for low-profile applications. G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 35 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=25A - - 18 mΩ VGS=4.5V, ID=20A - - 32 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=25A - 22 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=24V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±20V - - ±30 uA Qg Total Gate Charge2 ID=25A - 10.5 17 nC Qgs Gate-Source Charge V DS=25V - 4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 6 - nC td(on) Turn-on Delay Time2 VDS=15V - 9 - ns tr Rise Time I D=25A - 78 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 19 - ns tf Fall Time R D=0.6Ω -4- ns Ciss Input Capacitance V GS=0V - 950 1520 pF Coss Output Capacitance V DS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Rg Gate Resistance f=1.0MHz - 2.5 3.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=25A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=20A, VGS=0V, - 22 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. AP3402GEH/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.6 0.9 1.2 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =25A V G =10V 100 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 5.0V 4.5V V G =3.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =20A T C =25 o C 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =3.0V 10V 7.0V 5.0V 4.5V 0.3 0.6 0.9 1.2 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP3402GEH/J 0 5 10 15 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V V DS =20V V DS =25V I D =25A Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse