AP3310GH-HF_14 A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -20V ▼ 2.5V Gate Drive Capability RDS(ON) 150mΩ ▼ Fast Switching Characteristic ID -10A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 5.0 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice RoHS-compliant Product AP3310GH/J-HF Rating - 20 +12 -10 0.01 Continuous Drain Current, VGS @ 4.5V -6.2 Pulsed Drain Current1 -24 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range -55 to 150 200902096 -55 to 150 Linear Derating Factor Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S G D S TO-252(H) G D S TO-251(J) This device is suited for low voltage and battery power applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-2.8A - - 150 m Ω VGS=-2.5V, ID=-2.0A - - 250 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.5 - - V gfs Forward Transconductance V DS=-5V, ID=-2.8A - 4.4 - S IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=125oC) VDS=-16V, VGS=0V - - -250 uA IGSS Gate-Source Leakage V GS=+12V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=-2.8A - 6 - nC Qgs Gate-Source Charge V DS=-6V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-5V - 0.6 - nC td(on) Turn-on Delay Time2 VDS=-6V - 25 - ns tr Rise Time I D=-1A - 60 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=-5V - 70 - ns tf Fall Time R D=6Ω -6 0- ns Ciss Input Capacitance V GS=0V - 300 - pF Coss Output Capacitance V DS=-6V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -10 A ISM Pulsed Source Current ( Body Diode )1 - - -24 A VSD Forward On Voltage2 Tj=25℃, IS=-10A, VGS=0V - - -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP3310GH/J-HF -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -4.5V -4.0V -3.5V -3.0V -2.5V V GS = -2.0V 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -4.5V -4.0V -3.5V -3.0V -2.5V V GS = -2.0V 0.6 0.9 1.2 1.5 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -2.8A V GS = -4.5V 200 400 600 800 02468 1 0 -V GS (V) RDS(ON) (m I D = -2.8A T C =25 o C

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 25 50 75 100 125 150 T c , Case Temperature ( o C) -ID , Drain Current (A) 0 50 100 150 T c , Case Temperature ( o C) PD (W) 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse 100 1 10 100 -V DS (V) -ID (A) T C =25 °C Single Pulse 1ms 10ms 100ms DC

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP3310GH/J-HF 02468 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-2.8A V DS =-6V 100 1000 13579 1 1 1 3 -V DS (V) C (pF) f=1.0MHz Ciss Coss Crss -V SD (V) -IS(A) T j =25 o CT j =150 o C 0.5 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V)

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.3 x RATED VDS TO THE OSCILLOSCOPE -5 V D G S VDS VGS RG RD 0.3 x RATED VDS TO THE OSCILLOSCOPED G S VDS VGS IDI G -1~-3mA -5V