AP3310GH

AP3310GH A-POWER | Alldatasheet

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Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -20V ▼ 2.5V Gate Drive Capability RDS(ON) 150mΩ ▼ Fast Switching Characteristic ID -10A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 8.0 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice RoHS-compliant Product 201029074-1/4 ± 12 -10 15.6 -55 to 150 -55 to 150 AP3310GH/J Rating - 20 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, VGS @ 10V -6.2 Pulsed Drain Current1 -24 Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Thermal Data Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S G D S TO-252(H) G D S TO-251(J) This device is suited for low voltage and lower power applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-2.8A - - 150 mΩ VGS=-2.5V, ID=-2.0A - - 250 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.5 - - V gfs Forward Transconductance V DS=-5V, ID=-2.8A - 2.8 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150oC) VDS=-16V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±12V - - ±100 nA Qg Total Gate Charge2 ID=-2.8A - 4.2 - nC Qgs Gate-Source Charge V DS=-6V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-5V - 0.4 - nC td(on) Turn-on Delay Time2 VDS=-6V - 7 - ns tr Rise Time I D=-1A - 8 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=-5V - 13 - ns tf Fall Time R D=6Ω -5- ns Ciss Input Capacitance V GS=0V - 320 - pF Coss Output Capacitance V DS=-6V - 75 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 Tj=25℃, IS=-10A, VGS=0V - - -1.2 V trr Reverse Recovery Time 2 IS=-2.8A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by Maximum junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

65mΩ Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.01E+08 Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.6 0.8 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -2.8A V GS = -4.5V 012345678 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -5.0V -4.5V -3.5V -2.5V V G = -2.0V 012345678 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) V G = -2.0V -5.0V -4.5V -3.5V -2.5V T C =150 o C -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 120 160 200 240 280 02468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (Ω) I D =-2A T C =25 o C

65mΩ Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fi g 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0123456789 1 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -2.8A V DS = -6V 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthjc + t T 100 1000 1 5 9 1 31 72 12 5 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 0.02 Q VG QGS QGD QG Charge -5V td(on) tr td(off) tf VDS VGS 10% 90%

Package Outline : TO-252 Millimeters MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252 SYMBOLS ADVANCED POWER ELECTRONICS CORP. ee D FB1 F1 A3 C R : 0.127~0.381 (0.1mm Part Number Package Code 3310GH YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence LOGO meet Rohs requirement

Original Original Original A 2.10 2.30 2.50 A1 0.60 1.20 1.80 B1 0.40 0.60 0.80 B2 0.60 0.95 1.25 c 0.40 0.50 0.65 c1 0.40 0.55 0.70 D 6.00 6.50 7.00 D1 4.80 5.40 5.90 E1 5.00 5.50 6.00 E2 1.20 1.70 2.20 e ---- 2.30 ---- F 7.00 --- 16.70 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-251 ADVANCED POWER ELECTRONICS CORP. Millimeters SYMBOLS 3310GJ YWWSSS Part Number Package Code A c e D E1 E F e Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence LOGO meet Rohs requirement