AP3303H A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low Gate Charge BVDSS 25V ▼ ▼ ▼ ▼ Simple Drive Requirement RDS(ON) 25mΩ ▼ ▼ ▼ ▼ Fast Switching ID 28A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-case Thermal Resistance Junction-case Max. 4.0 ℃/W Rthj-amb Thermal Resistance Junction-ambient Max. 110 ℃/W Data & specifications subject to change without notice AP3303H/J Parameter Rating Drain-Source Voltage 25 Gate-Source Voltage Continuous Drain Current, V GS @ 10V 28 Continuous Drain Current, VGS @ 10V 18 Pulsed Drain Current1 130 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.25 Storage Temperature Range Total Power Dissipation 31 -55 to 150 200811031 Thermal Data Parameter The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3303J) is available for low-profile applications. ± 20 G D S TO-251(J) G D S TO-252(H) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 25 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 25 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=20A - 20 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=20V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=20A - 14.5 24 nC Qgs Gate-Source Charge V DS= 20V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 8.5 - nC td(on) Turn-on Delay Time2 VDS=15V - 8.8 - ns tr Rise Time I D=20A - 65 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 11 - ns tf Fall Time R D=0.75Ω -7- ns Ciss Input Capacitance V GS=0V - 340 540 pF Coss Output Capacitance V DS=25V - 250 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 98 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.5 V trr Reverse Recovery Time I S=20A, VGS=0V, - 30.5 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 29 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP3303H/J ± 20V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T c =25 o C V G =5.0V 7.0V 8.0V 9.0V 10V 0.01 0.1 100 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o CT j =150 o C 2.5 3.5 4.5 -50 0 50 100 150 T j ,Junction Temperature ( o C) VGS(th) (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =8A V G =10V 56789 1 0 1 1 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =8A T C =25 o C 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T c =150 o C V G =5.0V 7.0V 8.0V 9.0V 10V

Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedanc e Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 048 1 2 1 6 2 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =12V V DS =16V V DS =20V I D =20A 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse DC 10ms 100ms 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse