AP3302H A-POWER | Alldatasheet

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N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 25V ▼ Simple Drive Requirement RDS(ON) 50mΩ ▼ Fast Switching ID 16A

Description

V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG TJ Symbol Value Unit Rthj-case Thermal Resistance Junction-case Max. 6.4 ℃/W Rthj-amb Thermal Resistance Junction-ambient Max. 110 ℃/W Data & specifications subject to change without notice AP3302H/J Parameter Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.16 Storage Temperature Range Total Power Dissipation -55 to 150 200701031 Thermal Data Parameter The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3302J) is available for low-profile applications. ± 20 G D S TO-251(J) G D S TO-252(H) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA V IDSS Drain-Source Leakage Current (Tj=25oC) VDS=25V, VGS=0V uA Drain-Source Leakage Current (Tj=150oC) VDS=20V, VGS=0V uA IGSS Gate-Source Leakage VGS= nA Qg Total Gate Charge2 ID=10A 7.4 nC Qgs Gate-Source Charge VDS= 24V 2.2 nC Qgd Gate-Drain ("Miller") Charge VGS=10V 4.2 nC td(on) Turn-on Delay Time2 VDS=15V ns tr Rise Time ID=16A 7.4 ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V ns tf Fall Time RD=0.94Ω ns Ciss Input Capacitance VGS=0V 164 290 pF Coss Output Capacitance VDS=25V 158 pF Crss Reverse Transfer Capacitance f=1.0MHz pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=16A, VGS=0V 1.3 V trr Reverse Recovery Time IS=16A, VGS=0V, ns Qrr Reverse Recovery Charge dI/dt=100A/µs nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP3302H/J ± 20V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T c =25 o C V G =5.0V 7.0V 8.0V 9.0V 10V V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T c =150 o C V G =5.0V 7.0V 10V 9.0V 8.0V 0.01 0.1 100 0.4 0.8 1.2 1.6 V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o C T j =150 o C 2.5 3.5 4.5 -50 100 150 T j ,Junction Temperature ( o C) VGS(th) (V) 100 150 T j , Junction Temperature ( o C) PD (W) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V G =10V

Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =10A V DS =20V V DS =16V V DS =12V 100 1000 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 0.01 0.1 100 0.1 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 10ms 100ms DC 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse