AP3039_09 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Input V oltage Range 5V to 27V
  • 0.6A Peak MOSFET Gate Driver
  • 20ns Quick MOSFET Gate Driver
  • Duty Cycle Limit of 90%
  • Programmable UVLO
  • Programmable Over V oltage Protection
  • Cycle by Cycle Current Limit
  • Adjustable Soft-Start
  • Adjustable Operation Frequency from 200kHz to 1MHz

Applications

  • LED Lighting
  • Notebook
  • LCD Display Modules

Figure 1. Package Types of AP3039

Figure 2. Pin Configuration of AP3039 (Top View)

BCD Semiconductor Manufacturing LimitedDec. 2009 Rev. 1. 4 Pin Number Pin Name Function16-pin 14-pin

13 E N E n a b l e p i n

2 4 VIN Input supply pin, mu st be locally bypassed 3, 12 NC No connection (for QFN-3x3-16 package only)

45 V C C

6V linear regulator output pin. VCC is used to bias the gate driver for the external MOSFET. If V IN is less than 8.5V , the V CC is equal to V IN minus drop voltage across bypass switch. If VIN is less than 6V , connect VCC to VIN. This pin should be bypassed to GND (recommend to connect with AGND pin) with a ceramic capacitor 56 O U T Connect this pin to the gate of external MO SFET, the gate driver has 0.6A peak current capability 6 7 PGND Power ground 7 8 RT An external resistor connected from this pin to GND to set the operating frequency 8 9 CS Sense switch current pin, which is used fo r current mode control and for current limit 9 10 AGND Reference ground 10 11 SHDN This pin can be connected to current matched chip and receiv es error signal used to shut down the system 11 12 FB V oltage Feedback Pin. The reference voltage is 500mV 13 13 COMP Compensation Pin. This pin is th e output of the internal Error Amplifier 14 14 SS An external soft start time capacitor is connected from this pin to ground and is charged by internal 12µA current source to control regulator soft start time 15 1 UVLO Two resistors connected from this pin to ground and the VIN pin respectively to set start up and shutdown level 16 2 OV Over output voltage protection pin EP Exposed backside pad. Solder to the circ uit board ground plane with sufficient copper connection to ensure low thermal resistance (for QFN-3x3-16 package only) Pin Description

Figure 3. Functional Block Diagram of AP3039

BCD Semiconductor Manufacturing LimitedDec. 2009 Rev. 1. 4 Package Temperature Range Part Number Marking ID Packing Type QFN-3x3-16 -40 to 85oC AP3039FNTR-G1 B2A Tape & Reel SOIC-14 AP3039M-G1 3039M-G1 Tube AP3039MTR-G1 3039M-G1 Tape & Reel BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Circuit Type Package FN: QFN-3x3-16 G1: Green AP3039 -

Ordering Information

TR: Tape and Reel Blank: Tube M: SOIC-14

BCD Semiconductor Manufacturing LimitedDec. 2009 Rev. 1. 4 Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max- imum Ratings" for extended periods may affect device reliability. Parameter Symbol Min Max Unit Input V oltage VIN 52 7V Operating Frequency f 200 1000 kHz Operating Temperature T A -40 85 oC Recommended Operating Conditions Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input V oltage V IN 30 V VCC Pin V oltage V CC 10 V OUT Pin V oltage V OUT 10 V Feedback Pin V oltage V FB 7V UVLO Pin V oltage V UVLO 7V CS Pin V oltage V CS 7V SHDN Pin V oltage V SHDN 7V Enable Pin V oltage V EN VIN V OV Pin V oltage V OV 7V Thermal Resistance (Junction to Ambient, no Heat sink) θJA QFN-3x3-16 60 oC/W SOIC-14 102 Operating Junction Temperature T J 150 oC Storage Temperature Range T STG -65 to 150 oC Lead Temperature (Soldering, 10sec) T LEAD 260 oC ESD (Machine Model) 200 V ESD (Human Body Model) 2000 V

BCD Semiconductor Manufacturing LimitedDec. 2009 Rev. 1. 4 Parameter Symbol Conditions Min Typ Max Unit Input V oltage V IN VCC=VIN 56 V VCC bypassed to GND through a 0.47µF capacitor 62 7 Feedback V oltage VFB 490 500 510 mV FB Pin Bias Current I FB 35 100 nA Quiescent Current I Q No switching 3 5 mA Shutdown Quiescent Current I SHDN VEN=0V 1 2 µA VCC V oltage VCC 9V≤VIN≤2 7 V 5 . 566 . 5 V 6V≤VIN<9V 5 VCC Current Limit I CC-LIM 50 mA Drop V oltage Across Bypass Switch VIN-VCC ICC=0mA, fOSC≤200kHz, 6V≤VIN<8.5V 300 mV Bypass Switch Turn-off Threshold VBYP-HI VIN increasing 8.7 V Bypass Switch Threshold Hysteresis VBYP-HYS VIN decreasing 260 mV VCC Pin UVLO Rising Threshold VCC-HI 4.7 V VCC Pin UVLO Falling Hysteresis VCC-HYS 300 mV Oscillator Frequency fOSC Adjustable, RT=51kΩ to 150kΩ 200 1000 kHz UVLO Threshold V UVLO 1.22 1.25 1.28 V UVLO Hysteresis Current Source I HYS 22 µA Current Limit Threshold V oltage V CS 90 110 130 mV RT Voltage V RT 1.20 1.25 1.30 V Error Amplifier Transconductance G S 470 µA/V EN Pin Threshold V oltage VEH 2.0 V VEL 0.5 SHDN Pin Threshold V oltage VIH 2.0 V VIL 0.5

Electrical Characteristics

(VIN=12V , VEN =VIN, TA=25oC, unless otherwise specified.)

BCD Semiconductor Manufacturing LimitedDec. 2009 Rev. 1. 4 Parameter Symbol Conditions Min Typ Max Unit OV Threshold V OV 1.25 V OV Hysteresis Current Source I OV-HYS 22 µA Maximum Duty Cycle D MAX 90 93 % Soft Start Current Source I SS 12 µA Out Pin Rise Time t RISE Out Pin Load =1nF 20 ns Out Pin Fall Time t FALL Out Pin Load =1nF 20 ns OUT Dropout V oltage (VCC-VOUT)V OUT-H IOUT=50mA 0.25 0.75 V OUT Low V oltage Level (VOUT)V OUT-L IOUT=100mA 0.25 0.75 V Thermal Shutdown Temperature TOTSD 160 oC Thermal Shutdown Hysteresis THYS 20 oC Electrical Characteristics (Continued) (VIN=12V , VEN =VIN, TA=25oC, unless otherwise specified.)

BCD Semiconductor Manufacturing LimitedDec. 2009 Rev. 1. 4

Application Information

AP3039 is a boost DC-DC controller with adjustable operation frequency. Current mode control scheme provides excellent line and load regulation. Operation can be best understood by referring to Figure 3. At the start of each oscillator cycle, the SR latch is set and external power switch Q1 (see Figure 20) turns on and the switch current wi ll increase linearly. The voltage on external sense resistor R CS (see Figure 20), connected from CS pin to GND, is proportional to the switch current. This voltage is added to a stabilizing ramp and the result is fed into the non-inversion input of the PWM comparator. Wh en this non-inversion input voltage exceeds inversion input voltage of PWM comparator which is the output voltage of the error amplifier EA, the SR latch is reset and the external power switch turns off. The voltage level at inversion input of PWM comparator sets the peak current level to keep the output voltage in regulation. This voltage level is the amplified signa l of the voltage difference between feedback voltage and reference voltage of 0.5V . So, a constant output current can be provided by this operation mode. Input Under-Voltage Detector AP3039 contains an Under V oltage Lock Out (UVLO) circuit. Two resistors R1 and R2 are connected from UVLO pin to ground and VIN pin respectively (see Figure 20). The resistor divider must be designed such that the voltage on the UVLO pin is higher than 1.25V when VIN is in the desired operating range. If the voltage on the pin is below under voltage threshold, all functions of AP3039 are disabled, but the system will remain in a low power standby state. UVLO hysteresis is accomplished through an internal 22 µA current source which switched on or off 22 µA current into the impedance of the set-point divider. When the UVLO threshold is exceeded, the current source is activated to instantly raise the voltage on the UVLO pin. When the UVLO pin voltage falls below the threshold the current source is turned off, causing the voltage on the UVLO pin to fall. The formula for UVLO can be expresses as blow: For Input Threshold V oltage V IN_THRESHOLD=1.25V*(R1+R2)/R2 For Input Hysteresis V oltage V IN-HYSTERESIS=22µA*R1 Over Voltage Protection AP3039 has an over voltage protection (OVP) circuit. The OV Pin is connected to the center tap of R3 and R4 resistor voltage-divider from the high voltage output to GND (see Figure 20). When the loop is open or the output voltage becomes excessive in any case, result the voltage on OV pin exceed s 1.25V , all functions of AP3039 will be disabled, and the output voltage will fall. OVP hysteresis is accomp lished with an internal 22µA current source and the operation mode is the same as UVLO. The formula for OVP can be expresses as blow: For OVP V oltage V OVP=1.25V*(R3+R4)/R4 For OVP Hysteresis V oltage V OVP-HYSTERESIS=22µA*R3 Frequency Selection An external resistor R T, connected from RT pin to GND, is used to set the operating frequency (see Figure 20). Operation frequency range is from 200kHz to 1MHz (see Table 1). High frequency operation optimizes the regulator for the smallest component size, while low frequency operation can reduce the switch losses. Table 1. Frequency Selection

Figure 20. Application Circuit 1 of AP3039 (Note 2)

BCD Semiconductor Manufacturing LimitedDec. 2009 Rev. 1. 4 Typical Application (Continued) Note 2: The output voltage is decided by R5, R6 and the internal 0.5V reference. The output voltage accuracy is determined by the accuracy of R5 and R6, for which the precise resistors are preferred. VOUT= Note 3: In this application, the LED current is contro lled by the feedback resistor R5. LEDs current accuracy is determined by regulator‘s feedback threshold accuracy and is independent of the LEDs‘ forward voltage variation. So the precise resistors are the better choices. The resistance of R5 is in inverse proportion to the LED current since the feedback reference is fixed at 0.5V . The relation of R5 and the LED current can be expressed as below: R5= Note 4: The summation of LED current is determined by R5 and internal 0.5V reference same as the illustration in Figure 22. More detailed application information please refer to application note. () R6R5*R6 0.5V + LEDI 0.5V

BCD Semiconductor Manufacturing LimitedDec. 2009 Rev. 1. 4 QFN-3x3-16 Mechanical Dimensions Unit: mm(inch) 0.700(0.028) 0.900(0.035) 0.000(0.000) 0.050(0.002) 0.178(0.007) 0.228(0.009) 0.180(0.007) 0.280(0.011) BSC 0.050(0.020) 1.500(0.059) Ref 1.500(0.059) Ref 0.450(0.018) 0.350(0.014) Bottom View Exposed Pad Pin 1 Identification Pin 1 Identification3.100(0.122) 2.900(0.114) 3.100(0.122) 2.900(0.114) Pin1

BCD Semiconductor Manufacturing LimitedDec. 2009 Rev. 1. 4 Mechanical Dimensions (Continued) SOIC-14 Unit: mm(inch) Note: Eject hole, oriented hole and mold mark is optional. 8.550(0.337) 1.350(0.053) 0.700(0.028) 0.100(0.004) 0.250(0.010) 0.500(0.020) R0.200(0.008) 20:1 A 0.280(0.011) ×45° A 0.190(0.007) 9.5° Depth 0.060(0.002) 0.100(0.004) 2.000(0.079) 1.270(0.050) 1.000(0.039) 1.300(0.051) 5.800(0.228) 8.750(0.344) 0.250(0.010) 1.750(0.069) 0.250(0.010) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 6.200(0.244) 0.600(0.024) R0.200(0.008) 0.250(0.010) 0.200(0.008)MIN 0.480(0.019)×45° φ

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen, 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277