AP3015 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Low Quiescent Current In Active Mode (Not Switching): 17µA Typical In Shutdown Mode: <1µA
  • Low Operating VIN 1.2V Typical for AP3015 1.0V Typical for AP3015A
  • Low VCESAT Switch 200mV Typical at 300mA for AP3015 70mV Typical at 70mA for AP3015A
  • High Output V oltage: up to 34V
  • Fixed Off-Time Control
  • Switching Current Limiting 350mA Typical for AP3015 100mA Typical for AP3015A
  • Operating Temperature Range: -40 oC to 85oC

Applications

  • MP3, MP4
  • Battery Power Supply System
  • LCD/OLED Bias Supply
  • Handheld Device
  • Portable Communication Device

Figure 1. Package Type of AP3015/A

Figure 2. Pin Configuration of AP3015/A (Top View)

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Aug. 2006 Rev. 1. 0 BCD Semiconductor Manufacturing Limited Preliminary Datasheet SHDN VIN BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

Ordering Information

Package Temperature Range Part Number Marking ID Packing Type SOT-23-5 -40 to 85oC AP3015KTR-E1 E6E Tape & Reel AP3015AKTR-E1 E6F Tape & Reel Circuit Type Package E1: Lead Free AP3015 TR: Tape and Reel K: SOT-23-5 Blank: AP3015 A: AP3015A Functional Block Diagram FB GND SW DRIVER400nS ONE SHOT Bandgap CURRENT-LIMIT REFERENCECURRENT-LIMIT COMPARATOR RESET VREF FEEDBACK COMPARATOR ENABLE Figure 3. Functional Block Diagram of AP3015/A

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Aug. 2006 Rev. 1. 0 BCD Semiconductor Manufacturing Limited Preliminary Datasheet Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max- imum Ratings" for extended periods may affect device reliability. Parameter Symbol Min Max Unit Input V oltage VIN AP3105 1.2 12 V AP3105A 1.0 12 Operating Temperature T A -40 85 oC Recommended Operating Conditions Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input V oltage V IN 15 V SW V oltage V SW 36 V FB V oltage V FB VIN V SHDN Pin V oltage V SHDN 15 V Thermal Resistance (Junction to Ambient, no Heat sink) R θJA 265 oC/W Operating Junction Temperature T J 150 oC Storage Temperature Range T STG -65 to 150 oC Lead Temperature (Soldering, 10sec) T LEAD 260 oC ESD (Human Body Model) 3000 V

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Aug. 2006 Rev. 1. 0 BCD Semiconductor Manufacturing Limited Preliminary Datasheet (VIN=VSHDN=1.2V , TA=25oC, unless otherwise specified.) Parameter Symbol Conditions Min Typ Max Unit Input V oltage VIN AP3015 1.2 12 V AP3015A 1.0 12 Quiescent Current IQ Not Switching 17 30 µA VSHDN =0V 1 Feedback V oltage V FB 1.205 1.23 1.255 V FB Comparator Hysteresis V FBH 8m V FB Pin Bias Current I FB VFB=1.23V 30 80 nA Output V oltage Line Regulation L NR 1.2V<VIN<12V 0.05 0.1 %/V Switching Current Limit IL AP3015 300 350 400 mA AP3015A 75 100 125 Switch Saturation V oltage VCESAT AP3015, ISW=300mA 200 300 mV AP3015A, ISW=70mA 70 120 Switch Off Time TOFF VFB>1V 400 nS VFB<0.6V 1.5 µS SHDN Input Threshold High V TH 0.9 V SHDN Input Threshold Low V TL 0.25 SHDN Pin Current ISHDN VSHDN =1.2V 2 3 µA VSHDN =5V 8 12 Switch Leakage Current I SWL Switch Off, VSW=5V 0.01 5 µA

Electrical Characteristics

MICRO POWER STEP-UP DC-DC CONVERTER AP3015/A Aug. 2006 Rev. 1. 0 BCD Semiconductor Manufacturing Limited Preliminary Datasheet SOT-23-5 Unit: mm(inch) Mechanical Dimensions 2.820(0.111) 2.650(0.104) 1.500(0.059) 0.000(0.000) 1.050(0.041) 0.300(0.012) 0.950(0.037) 1.050(0.041) 0.100(0.004) 0.200(0.008) 0.300(0.012) 3.020(0.119) 1.700(0.067) 2.950(0.116) 0.400(0.016) 1.250(0.049) 0.100(0.004) 1.150(0.045) 0.200(0.008) 0.600(0.024) 1.800(0.071) 2.000(0.079) 0.700(0.028) REF TYP

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951, Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com