AP2R803GMT-HF

AP2R803GMT-HF_14 A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ SO-8 Compatible RDS(ON) 3mΩ ▼ Low On-resistance ID 105A ▼ RoHS Compliant & Halogen-Free

Description

ID@TC=25℃ A ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 ℃/W Data & specifications subject to change without notice AP2R803GMT-HF Halogen-Free Product 105 Parameter Rating Drain-Source Voltage 30 Continuous Drain Current3, VGS @ 10V 26.5 Pulsed Drain Current1 240 Gate-Source Voltage + 20 Continuous Drain Current3, VGS @ 10V 33 Continuous Drain Current (Chip), VGS @ 10V Thermal Data Parameter 201103021 Total Power Dissipation 50 Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Total Power Dissipation Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S The PMPAK® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink. S S S G PMPAK® 5x6 D D D D

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - - 3 m Ω VGS=4.5V, ID=20A - - 4.2 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=20A - 70 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 1 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=20A - 20 32 nC Qgs Gate-Source Charge V DS=15V - 4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 10 - nC td(on) Turn-on Delay Time2 VDS=15V - 10 - ns tr Rise Time I D=10A - 30 - ns td(off) Turn-off Delay Time R G=2Ω -3 0- ns tf Fall Time V GS=10V - 8 - ns Ciss Input Capacitance V GS=0V - 2250 3600 pF Coss Output Capacitance V DS=15V - 700 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 280 - pF Rg Gate Resistance f=1.0MHz - 1.5 3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 40 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 45 - nC Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 4.Starting Tj=25oC , VDD=20V , L=0.1mH , RG=25Ω , IAS=30A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP2R803GMT-HF 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 160 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 120 160 200 240 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2.4 2.8 3.2 3.6 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =20A T C =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 100 1000 0.01 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =15V 1000 2000 3000 4000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Charge Operation in this area limited by RDS(ON) 120 160 012345 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j =-40 o C