AP2N7002K A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS 60V ▼ ▼ ▼ ▼ Small Package Outline RDS(ON) 2Ω ▼ ▼ ▼ ▼ Surface Mount Device ID 640mA ▼▼▼▼ RoHS Compliant

Description

ID@TA=25℃ mA ID@TA=70℃ mA IDM mA PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 1.38 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.01 Continuous Drain Current3, VGS @ 10V 500 Pulsed Drain Current1,2 950 Gate-Source Voltage ±20 Continuous Drain Current3, VGS @ 10V 640 Parameter Rating Drain-Source Voltage 60 Pb Free Plating Product 200209062-1/4 AP2N7002K D G S SOT-23 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=500mA - - 2 Ω VGS=4.5V, ID=200mA - - 4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 2.5 V gfs Forward Transconductance V DS=10V, ID=600mA - 600 - mS IDSS Drain-Source Leakage Current (Tj=25oC) VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=70oC) VDS=48V ,VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=±20V - - ±30 uA Qg Total Gate Charge2 ID=600mA - 1 1.6 nC Qgs Gate-Source Charge V DS=50V - 0.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 0.5 - nC td(on) Turn-on Delay Time2 VDS=30V - 12 - ns tr Rise Time I D=600mA - 10 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 56 - ns tf Fall Time R D=52Ω -2 9- ns Ciss Input Capacitance V GS=0V - 32 50 pF Coss Output Capacitance V DS=25V - 8 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width < 300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. AP2N7002K

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 2.0 4.0 6.0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 5.0V 4.5V V G = 3.0 V 0.0 0.2 0.4 0.6 0.8 1.0 0246 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 5.0V 4.5V V G = 3.0 V 1.0 1.5 2.0 2.5 3.0 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D = 200m A T A =25 o C 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = 500m A V G =10V 0.2 0.4 0.6 0 0.4 0.8 1.2 1.6 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.5 0.9 1.3 1.7 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP2N7002K Q VG 4.5V QGS QGD QG Charge 0 0.5 1 1.5 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D = 600m A V DS =3 0V V DS =40V V DS =50V 100 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.010 0.100 1.000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.0 0.2 0.4 0.6 0.8 1.0 0246 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270 ℃℃℃℃/W t T