AP2N025N A-POWER | Alldatasheet
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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 2.5V Gate Drive BVDSS 20V ▼ Lower Gate Charge RDS(ON) 25mΩ ▼ Surface Mount Package ID 5.7A ▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 100 ℃/W Data and specifications subject to change without notice 1 201505281 Halogen-Free Product Parameter Rating Drain-Source Voltage 20 Gate-Source Voltage + 12 Drain Current3, VGS @ 4.5V 5.7 Drain Current3, VGS @ 4.5V 4.6 Pulsed Drain Current1 20 Total Power Dissipation 1.25 -55 to 150 Operating Junction Temperature Range -55 to 150 Thermal Data Parameter Storage Temperature Range G D S AP2N025 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S SOT-23S
Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V VGS=4.5V, ID=5A - - 25 m Ω VGS=2.5V, ID=2.5A - - 39 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.3 - 1.2 V gfs Forward Transconductance V DS=5V, ID=5A - 19 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS= +12V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=5A - 8 12.8 nC Qgs Gate-Source Charge V DS=10V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3 - nC td(on) Turn-on Delay Time V DS=10V - 6 - ns tr Rise Time I D=1A - 20 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 5- ns tf Fall Time V GS=5V - 18 - ns Ciss Input Capacitance V GS=0V - 700 1100 pF Coss Output Capacitance V DS=10V - 155 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=5A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 6 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t < 10s ; 300℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP2N025N Static Drain-Source On-Resistance2RDS(ON)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 0.2 0.4 0.6 0.8 1 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 5.0V 4.5V 4.0V 3.5V 3.0V V G =2.5V 0 0.2 0.4 0.6 0.8 1 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 5.0V 4.5V 4.0V 3.5V 3.0V V G =2.5V V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o CT j =150 o C 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D = 250uA 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =5A V G =4.5V 12345 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = 2.5A T A = 25 o C
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 048 1 2 1 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5A V DS =10V 200 400 600 800 1000 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja =300℃/W 0.02 Q VG 4.5V QGS QGD QG Chargetd(on) tr td(off)tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)
Fig 13. Drain Current v.s. Ambient Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance 0.4 0.8 1.2 1.6 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 02468 1 0 1 2 I D , Drain Current (A) RDS(ON) (m T j =25 o C 2.5V V GS =4.5V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) 0123 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C
Part Number : A06 A06SS Date Code : SS SS