AP2900EC4 A-POWER | Alldatasheet

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Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive BSSS 24V ▼ Ultra-small Package Outline RSS(ON) 22.5mΩ ▼ Protection Diode Built-in IS 9A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VSSS V VGSS V IS A ISM A PD@TA=25℃ W TSTG ℃ TJ ℃ Data and specifications subject to change without notice Rating Halogen-Free Product 201502241 -55 to 150 Source Current Junction Temperature -55 to 150 Pulsed Source Current1 60 Storage Temperature Range Total Power Dissipation3 1.6 Parameter +12 AP2900 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for the load switch, charge switch, battery switch for portable application. WLCSP 4 ball Top view Bottom view 0.65mm 0.6 5mm 0.3mm 0.225 mm 0.165mm 1.59 mm ± 0. 02mm 1. 59 mm +0.0 2mm

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units V(BR)SSS Source-Source Breakdown Voltage V GS=0V, IS=1mA 24 - - V RSS(ON) Static Source-Source On-Resistance2 VGS=4.5V, IS=3A 15 18.8 22.5 m Ω VGS=4V, IS=3A 15.5 19.5 23 m Ω VGS=3.7V, IS=3A 16 20 24 m Ω VGS=3.1V, IS=3A 17 21.5 26 m Ω VGS=2.5V, IS=3A 20 24 30 m Ω VGS(off) Cutoff Voltage V SS=10V, IS=1mA 0.5 - 1.3 V 丨yfs丨 Forward Transfer Admittance V SS=10V, IS=3A - 30 - S ISSS Zero Gate Voltage Source Current VSS=20V, VGS=0V - - 10 uA IGSS Gate-Source Leakage Current V GS=+8V, VSS=0V - - + 30 uA td(on) Turn-on Delay Time V SS=10V - 2 - us tr Rise Time I S=3A - 4 - us td(off) Turn-off Delay Time V SS=4.5V - 18 - us tf Fall Time - 9 - us Qg Total Gate Charge V SS=10V, VGS=4.5V, IS=3A - 18 - nC VF(S-S) Forward Source-Source Voltage2 IS=3A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP2900EC4

Test Circuits are Example of Measuring Channel-1(unless otherwise specified) TEST CIRCUIT : ISSS TEST CIRCUIT : IGSS TEST CIRCUIT : VGS(off) TEST CIRCUIT : 丨yfs丨 A VGS A VSS When Ch-1 is measured, Gate and Source of Ch-2 are short- circuitd. A VGS When Ch-1 is measured, Gate and Source of Ch-2 are short- circuitd. A VGS

Test Circuits are Example of Measuring Channel-1(unless otherwise specified) TEST CIRCUIT : RSS(ON) TEST CIRCUIT : VF(S-S) TEST CIRCUIT : Switching Time TEST CIRCUIT : Gate Charge When Ch-1 is measured, +4.5 V is added to VGS of Ch-2 When Ch-1 is measured, Gate and Source of Ch-2 are short- circuitd. VGS IS V VGS=0V G1 IF V VGS=4.5V V RL VSS RG VSS When Ch-1 is measured, Gate and Source of Ch-2 are short- circuitd.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Static Source-to-Source Fig 4. Typ. Source-to-Source on State On-Resistance v.s. Gate Voltage Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Charge Characteristics Reverse Diode 012345 V GS , Gate-to-Source Voltage (V) RSS(ON) (m I S =3A T A =25 o C -100 -50 0 50 100 150 T j , Junction Temperature ( o C) RSS(ON) (m I S =3A V GS =2.5V V GS =3.1V V GS =3.7V V GS =4.0V V GS =4.5V 0.1 V F(S-S) , Source-to-Source Voltage (V) IS, Source Current (A) T j =25 o C T j =150 o C T j = -55 o C 0 0.4 0.8 1.2 1.6 2 V SS , Source-to-Source Voltage (V) IS , Source Current (A) T A =2 5o C 4.5V 4.0V 3.5V 3.0V 2.5V V GS =2.0V V SS , Source-to-Source Voltage (V) IS , Source Current (A) T A =150 o C 4.5V 4.0V 3.5V 3.0V 2.5V V GS =2.0V 0 4 8 1 21 62 02 4 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I S =3A V SS =10V

Fig 7. Transfer Characteristics 0123 V GS , Gate-to-Source Voltage (V) IS , Source Current (A) T j =150 o C T j =25 o C V SS =10V T j =-55 o C

Date Code (YWWS) Y：Last Digit Of The Year WW：Week S：Sequence 2900 YWWS