AP28G45GEO-HF

AP28G45GEO-HF A-POWER | Alldatasheet

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Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR ▼ High Input Impedance VCE ▼ High Peak Current Capability ICP ▼ Low Gate Drive ▼ Strobe Flash Applications Absolute Maximum Ratings Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Min. Typ. Max. Units IGES - - ±10 uA ICES - - 10 uA VCE(sat) - 5.2 9 V VGE(th) 0.3 - 1.2 V Qg - 76 130 nC Qge -4- nC Qgc -2 6- nC td(on) - 220 - ns tr - 800 - ns td(off) - 1.6 - µs tf - 1.5 - µs Cies - 4485 8240 pF Coes -4 4- pF Cres -4 0- pF RthJA 1 - - 125 ℃/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board. Data and specifications subject to change without notice Rise Time Gate-Emitter Charge VCE=400V, VGE=0V VGE=2.5V, ICP=150A (Pulsed) VCE=VGE, IC=250uA IC=40A VCC=320V 150 Test Conditions VGE=± 6V, VCE=0V VCE=200V Thermal Resistance Junction-Ambient VGE=4V Fall Time V± 6 Parameter Maximum Power Dissipation Peak Gate-Emitter Voltage 150 A -55 to 150 ℃ W RoHS-compliant Product Units V400 400V 150A Rating Collector-Emitter Voltage Gate-Emitter Leakage Current Collector-Emitter Leakage Current Symbol VCE Storage Temperature Range Pulsed Collector Current, VGE @ 2.5V VGE ICP PD@TA=25℃1 Input Capacitance Output Capacitance f=1.0MHz Gate-Collector Charge Turn-on Delay Time VGE=4V VCE=30V Reverse Transfer Capacitance IC=160A RG=10Ω 201208037 TSTG Turn-off Delay Time VGE=0V TJ Operating Junction Temperature Range Parameter Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge G C E G E E E C C C C TSSOP-8

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Collector Current v.s. Fig 4. Collector- Emitter Saturation Voltage Gate-Emitter Voltage v.s. Junction Temperature Gate-Emitter Voltage Gate-Emitter Voltage 0 20 40 60 80 100 120 140 160 Junction Temperature ( o C) VCE(sat) ,Saturation Voltage(V) V GE =4.0V I C =90A I C =20A I C =60A 02468 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) T A = 150o C 5.0 V 4. 5 V 3.5 V 3 .0V V G = 2.5 V 120 160 02468 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) T A =25 o C 5.0V 4.5V 3.5V 3.0V V G =2.5V 0123456 V GE , Gate-Emitter Voltage(V) VCE ,Collector-Emitter Voltage(V) I C = 120A T A =25 o C 120 160 200 240 0123456 V GE , Gate-Emitter Voltage (V) IC , Collector Current(A) V CE =6.0V T A =150 o C I C =80A 0123456 V GE , Gate-Emitter Voltage(V) VCE ,Collector-Emitter Voltage(V) T A =150 o C I C =80A I C =40A I C =60A I C =40A T A =25 o C

Fig 7. Typical Capacitance Characterisitics Fig 8. Maximum Pulse Collector Current Fig 9. Switching Time Test Circuit Fig 10. Switching Time Waveform Fig 11. Gate Charge Test Circuit Fig 12. Gate Charge Waveform td(on) tr td(off) tf VCE VGE 10% 90% TO THE OSCILLOSCOPE C G E VCE VGE RG RC VCC=320 V 100 1000 10000 1 5 9 1 31 72 12 52 93 33 7 V CE , Collector-Emitter Voltage (V)) C (pF) f=1.0MHz Cies Coes Cres 0 20 40 60 80 100 120 Q G , Gate Charge (nC) VGE , Gate -Emitter Voltage (V) I CP =40A V CE =200V 120 160 02468 V GE , Gate-to-Emitter Voltage (V) ICP , Peak Collector Current (A) T C =70 o C VCC=200V TO THE OSCILLOSCOPE C G VCE VGE ICIG 1~3mA E

You should be design dV/dt value is below 400V/us, R G=30Ω when IGBT turn off. The slope of VCE from 30V to 90V dv/dt = (90V-30V) / δt) = 60V / δt IC (begin) IC (end) 0V, 0A VCE dV/dt period VCE δt 90V 30V This product is senstive to electrostatic discharge, please handle with caution.