AP28G40GEH

AP28G40GEH A-POWER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR ▼ High Input Impedance VCE ▼ High Peak Current Capability ICP ▼ Low Gate Drive ▼ Strobe Flash Applications Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Min. Typ. Max. Units IGES -- + 30 uA ICES - - 25 uA VCE(sat) - 3.5 8 V VGE(th) 0.3 - 1.2 V Qg - 76 130 nC Qge -4- nC Qgc -2 6- nC td(on) - 220 - ns tr - 800 - ns td(off) - 1.6 - µs tf - 1.5 - µs Cies - 4485 8240 pF Coes -4 4- pF Cres -4 0- pF RthJC -- 2 oC/W RthJA - - 110 oC/W Data and specifications subject to change without notice TJ VGE=2.5V, ICP=150A (Pulsed) VCE=VGE, IC=250uA Gate-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate Threshold Voltage Halogen-Free Product Turn-on Delay Time Turn-off Delay Time IC=40A Gate-Emitter Charge Total Gate Charge Parameter TSTG VGE=+ 6V, VCE=0V VCE=400V, VGE=0V Maximum Power Dissipation AP28G40GEH/J Symbol VCE 400V 150A Rating Collector-Emitter Voltage UnitsParameter Gate-Collector Charge V400 Storage Temperature Range Pulsed Collector Current, VGE @ 2.5V A -55 to 150 oC W V oC VCC=320V Operating Junction Temperature Range 150 Test Conditions Reverse Transfer Capacitance Input Capacitance Output Capacitance f=1.0MHz VGE=4V Fall Time ± 6 150 1.1 VGEP ICP PD@TA=25℃ Peak Gate-Emitter Voltage Rise Time ▼ RoHS Compliant & Halogen-Free Thermal Resistance Junction-Ambient 201502253 VCE=200V VGE=4V VCE=30V RG=10Ω IC=160A VGE=0V Thermal Resistance Junction-Case G C E G C E TO-252(H) TO-251(J) G C E

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Collector Current v.s. Fig 4. Collector- Emitter Saturation Voltage Gate-Emitter Voltage v.s. Junction Temperature Gate-Emitter Voltage Gate-Emitter Voltage AP28G40GEH/J 1.0 1.4 1.8 2.2 2.6 3.0 0 25 50 75 100 125 150 Junction Temperature ( o C) VCE(sat) ,Saturation Voltage(V) V GE =4.0V I C =90A I C =20A I C =60A 100 02468 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) T C =150 o C 5.0 V 4. 5 V 3.5 V 3 .0V V G = 2.5 V 120 160 02468 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) T C =25 o C 5.0V 4.5V 3.5V 3.0V V G =2.5 0123456 V GE , Gate-Emitter Voltage(V) VCE ,Collector-Emitter Voltage(V) I C = 120A T C =25 o C 100 01234 V GE , Gate-Emitter Voltage (V) IC , Collector Current(A) V CE = 2.5V T C =150 o C I C =80A 0123456 V GE , Gate-Emitter Voltage(V) VCE ,Collector-Emitter Voltage(V) T C =150 o C I C =80A I C =40A I C =60A I C =40A T C =25 o C

Fig 7. Typical Capacitance Characterisitics Fig 8. Maximum Pulse Collector Current Fig 9. Switching Time Test Circuit Fig 10. Switching Time Waveform Fig 11. Gate Charge Test Circuit Fig 12. Gate Charge Waveform AP28G40GEH/J td(on) tr td(off) tf VCE VGE 10% 90% TO THE OSCILLOSCOPE C G E VCE VGE RG RC VCC=320 V 100 1000 10000 1 5 9 1 31 72 12 52 93 33 7 V CE , Collector-Emitter Voltage (V)) C (pF) f=1.0MHz Cies Coes Cres 0 20 40 60 80 100 120 Q G , Gate Charge (nC) VGE , Gate -Emitter Voltage (V) 120 160 02468 V GE , Gate-to-Emitter Voltage (V) ICP , Peak Collector Current (A) T C =70 o C VCC=200V TO THE OSCILLOSCOPE C G VCE VGE ICIG 1~3mA E

You should be design dV/dt value is below 400V/us, RG=30Ω when IGBT turn off. The slope of VCE from 30V to 90V dv/dt = (90V-30V) / δt) = 60V / δt IC (begin) IC (end) 0V, 0A VCE dV/dt period VCE δt 90V 30V This product is senstive to electrostatic discharge, please handle with caution.

for low voltage MOSFET only28G40GEJ YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 28G40GEH YWWSSS meet Rohs requirement for low voltage MOSFET only.