AP2810 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Low MOSFET on Resistance: 60mΩ @VIN=5.0V
  • Compliant to USB Specifications
  • Operating Voltage Range: 2.7V to 5.5V
  • Low Supply Current: 65µA (Typ)
  • Low Shutdown Current: 1.0µA (Max)
  • Guarantee 1.0A Continuous Load
  • Current Limit: 1.1A (Min), 2.1A (Max)
  • Under-voltage Lockout
  • Logic Level Enable Pin: Available in Active-high or Active-low Version
  • Over-current Protection
  • Over Temperature Protection
  • Load Short Protection with Fold-back
  • No Reverse Current When Power off
  • With Output Shutdown Pull-low Resistor for A/C Versions

Applications

  • USB Power Management
  • USB Bus/Self Powered Hubs
  • Hot-plug Power Supplies
  • Battery-charger Circuits
  • Notebooks, Motherboard PCs

Figure 1. Package Types of AP2810

Figure 2. Pin Configuration of AP2810 (Top View)

1 GND Ground

Figure 3. Functional Block Diagram of AP2810

1.0A High-side Power Distribution Switch with Enable and Flag AP2810 Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited

Ordering Information

Product Package Condition Temperature Range Part Number Marking ID Packing Type Green Green AP2810A SOIC-8 Active High with Auto Discharge -40 to 85°C AP2810AM-G1 2810AM-G1 Tube AP2810AMTR-G1 2810AM-G1 Tape & Reel MSOP-8 AP2810AMM-G1 2810AMM-G1 Tube AP2810AMMTR-G1 2810AMM-G1 Tape & Reel AP2810B SOIC-8 Active High without Auto Discharge -40 to 85°C AP2810BM-G1 2810BM-G1 Tube AP2810BMTR-G1 2810BM-G1 Tape & Reel MSOP-8 AP2810BMM-G1 2810BMM-G1 Tube AP2810BMMTR-G1 2810BMM-G1 Tape & Reel AP2810C SOIC-8 Active Low with Auto Discharge -40 to 85°C AP2810CM-G1 2810CM-G1 Tube AP2810CMTR-G1 2810CM-G1 Tape & Reel MSOP-8 AP2810CMM-G1 2810CMM-G1 Tube AP2810CMMTR-G1 2810CMM-G1 Tape & Reel AP2810D SOIC-8 Active Low without Auto Discharge -40 to 85°C AP2810DM-G1 2810DM-G1 Tube AP2810DMTR-G1 2810DM-G1 Tape & Reel MSOP-8 AP2810DMM-G1 2810DMM-G1 Tube AP2810DMMTR-G1 2810DMM-G1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. G1: Green TR: Tape & Reel Blank: Tube Package M: SOIC-8 MM: MSOP-8 Condition A: Active High with Auto Discharge B: Active High without Auto Discharge C: Active Low with Auto Discharge D: Active Low without Auto Discharge

1.0A High-side Power Distribution Switch with Enable and Flag AP2810 Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage V IN 6.0 V Operating Junction Temperature Range TJ 150 ºC Storage Temperature Range T STG -65 to 150 ºC Lead Temperature (Soldering,10 Seconds) TLEAD 260 ºC Thermal Resistance Junction to Ambient θJA SOIC-8 135 oC/W MSOP-8 150 ESD (Machine Model) 200 V ESD (Human Body Model) 2000 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under “Recommended Operating Co nditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage V IN 2.7 5.5 V Operating Ambient Temperature Range TA -40 85 °C

1.0A High-side Power Distribution Switch with Enable and Flag AP2810 Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited

Electrical Characteristics

(VIN=5.0V , CIN=2.2µF, COUT=1.0µF, Typical TA=25°C, unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Input V oltage Range V IN 2.7 5.5 V Switch On Resistance R DS(ON) V IN=5V , IOUT=1.0A 60 80 m Ω Current Limit I LIMIT V OUT=4.0V 1.1 1.5 2.1 A Supply Current I SUPPLY V IN=5V , No Load 65 85 µA Fold-back Short Current I SHORT V OUT=0 0.6 A Shutdown Supply Current I SHUTDOWN Chip Disable, Shutdown Mode 0.1 1 µA Enable High Inpu t Threshold VENH 1.6 5.5 V Enable Low Inpu t Threshold VENL 0 1.0 V Enable Pin Input Current I EN Force 0V to 5.0V at EN Pin -1.0 1.0 µA Under V oltage Lockou t Threshold V oltage VUVLO V IN Increasing from 0V 2.2 2.5 2.7 V Under V oltage Hysteresis V UVLOHY 0.2 V Reverse Current I REVERSE Chip Disable, V OUT>VIN 0.1 1.0 µA Output Pull Low Resistance after Shutdown RDISCHARGE AP2810A, AP2810C only 100 200 Ω Output Turn-on Time t ON From Enable Active to 90% of Output 500 µs Flag Delay Time t DFLG From Fault Condition to Flag Active 5 10 15 ms Flag Low V oltage V FLG I SINK=5mA 35 70 mV Flag Leakage I LEAKAGE Flag Disable, Force 5.0V 1.0 µA Thermal Shutdown Temperature TOTSD 150 oC Thermal Shutdown Hysteresis THYOTSD 30 oC

F i g u r e 8 . O u t p u t S h o r t C u r r e n t v s . F i g u r e 9 . O u t p u t S h o r t C u r r e n t v s . Figure 10. Shutdown Current vs. Ambient Temperature Figure 11. Reverse Current vs. Ambient Temperature

Note 2: 2.2μF input capacitor is enough in most application cases. Figure 20. Typical Application of AP2810

1.0A High-side Power Distribution Switch with Enable and Flag AP2810 Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions S O I C - 8 U n i t : m m ( i n c h ) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) Note: Eject hole, oriented hole and mold mark is optional.

1.0A High-side Power Distribution Switch with Enable and Flag AP2810 Jul. 2012 Rev 1. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) M S O P - 8 U n i t : m m ( i n c h ) 4.700(0.185) 5.100(0.201) 0.410(0.016) 0.650(0.026) 0.000(0.000) 0.200(0.008) 3.100(0.122) 2.900(0.114)

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277