AP2762R-A

AP2762R-A A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 650V ▼ Fast Switching Characteristics RDS(ON) 1.4Ω ▼ Simple Drive Requirement ID 7A

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.35 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data & specifications subject to change without notice AP2762R-A -55 to 150 92.6 RoHS-compliant Product Parameter 200802203 Parameter Rating 650 ±30 -55 to 150 Storage Temperature Range G D S AP2762 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. G D S TO-262(R) The TO-262 package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 650 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=3A - - 1.4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=4A - 3.5 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=±30V - - ±100 nA Qg Total Gate Charge3 ID=6A - 31 50 nC Qgs Gate-Source Charge V DS=200V - 7 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 13 - nC td(on) Turn-on Delay Time3 VDD=200V - 33 - ns tr Rise Time I D=3A - 29 - ns td(off) Turn-off Delay Time R G=50Ω,VGS=10V - 186 - ns tf Fall Time R D=67Ω -4 6- ns Ciss Input Capacitance V GS=0V - 1330 2130 pF Coss Output Capacitance V DS=30V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=6A, VGS=0V - - 1.5 V trr Reverse Recovery Time3 IS=6A, VGS=0V, - 475 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 6.4 - uC Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting T j=25oC , VDD=50V , L=1mH , RG=25Ω 3.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. AP2762R-A THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP2762R-A 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =3A V G =10V 0 4 8 1 21 62 02 4 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8.0V 7.0V 6.0V V G = 5.0 V 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8.0V 7.0V 6.0V V G = 5 .0 V V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o C T j = 25 o C 0.6 0.8 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP2762R-A 0.01 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6A V DS =200V 100 1000 10000 1 5 9 13 17 21 25 29 33 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off)tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge

Package Outline : TO-262 Millimeters MIN NOM MAX A 4.24 4.44 4.64 b 0.66 0.76 0.86 b1 1.07 1.27 1.47 b3 0.76 0.86 1.06 c 0.30 0.40 0.50 c1 1.15 1.30 1.45 D 8.30 8.60 8.90 E 9.90 10.20 10.50 e 2.04 2.54 3.04 L 10.50 11.00 11.50 L1 9.50 10.00 10.30 L3 ---- 1.30 ---- L4 10.80 11.30 11.35 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-262 SYMBOLS ADVANCED POWER ELECTRONICS CORP. E b e D b3 A1 A c L Part Number 2762R YWWSSS LOGO Option A Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence E b e D b3 A1 A c L Package Code