AP2625GY-HF

AP2625GY-HF_14 A-POWER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS -30V ▼ Capable of 2.5V Gate Drive RDS(ON) 185mΩ ▼ Surface Mount Package ID - 2A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 110 ℃/W Data and specifications subject to change without notice -55 to 150 1.2 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Continuous Drain Current3 -1.6 Pulsed Drain Current1 -20 201301174 AP2625GY-HF Rating -30 +12 -2.0 Halogen-Free Product Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is widely used for commercial-industrial applications. SOT-26

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-1.6A - - 185 m Ω VGS=-2.5V, ID=-1A - - 265 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.3 - -1.2 V gfs Forward Transconductance V DS=-5V, ID=-2A - 3.3 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+12V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=-2A - 4 6 nC Qgs Gate-Source Charge V DS=-24V - 0.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 2 - nC td(on) Turn-on Delay Time2 VDS=-15V - 5 - ns tr Rise Time I D=-1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 0- ns tf Fall Time V GS=-10V - 3 - ns Ciss Input Capacitance V GS=0V - 265 425 pF Coss Output Capacitance V DS=-25V - 42 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 32 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-2A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 5s ; 180℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234567 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C - 10 V -7.0V -5.0V -4.5V V G =- 2.5 V 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C - 10 V -7.0V -5.0V -4.5V V G =- 2.5 V 120 140 160 180 200 220 02468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =-1A T A =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =- 1.6 A V G = -4.5 V 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 02468 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) V DS = -24V I D = -2A 100 1000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 180℃/W t T 0.02 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC