AP2608AGK-HF

AP2608AGK-HF_14 A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 150V ▼ Lower Gate Charge RDS(ON) 1.5Ω ▼ Fast Switching Characteristic ID 0.92A ▼ Halogen Free & RoHS Compliant Product

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-a Maximum Thermal Resistance, Junction-ambient 3 45 ℃/W Data and specifications subject to change without notice 201108112 AP2608AGK-HF Halogen-Free Product Parameter Rating Drain-Source Voltage 150 Gate-Source Voltage + Continuous Drain Current3, VGS @ 10V 0.92 Continuous Drain Current3, VGS @ 10V 0.74 Pulsed Drain Current1 3 -55 to 150 Operating Junction Temperature Range -55 to 150 Total Power Dissipation 2.8 Thermal Data Parameter Storage Temperature Range G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. D D S GSOT-223 The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 150 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=0.5A - - 1.5 Ω VGS=4.5V, ID=0.2A - - 1.8 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.8 - 2.5 V gfs Forward Transconductance V DS=10V, ID=0.5A - 1.4 - S IDSS Drain-Source Leakage Current VDS=120V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=0.5A - 5 8 nC Qgs Gate-Source Charge V DS=75V - 0.7 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 1.2 - nC td(on) Turn-on Delay Time V DS=75V - 3 - ns tr Rise Time I D=0.5A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 2- ns tf Fall Time V GS=10V - 6 - ns Ciss Input Capacitance V GS=0V - 180 288 pF Coss Output Capacitance V DS=15V - 17 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 13 - pF Rg Gate Resistance f=1.0MHz - 3.3 6.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=0.9A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=1A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 37 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad. AP2608AGK-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.8 1.2 1.6 2.4 2.8 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 02468 1 0 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =0.5A V G =10V 0.4 0.8 1.2 1.6 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) I D =1mA I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 012345 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =0.5A V DS =75V Q VG 4.5V QGS QGD QG Charge 100 200 300 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 120℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.001 0.01 0.1 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)