AP2606AGY-HF A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Fast Switching Characteristic BVDSS 30V ▼ Lower Gate Charge RDS(ON) 28mΩ ▼ Small Footprint & Low Profile Package ID 7A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice Operating Junction Temperature Range -55 to 150 201009022 Thermal Data Parameter Storage Temperature Range Continuous Drain Current3, VGS @ 10V 5.6 Pulsed Drain Current1 20 Total Power Dissipation 2 -55 to 150 Gate-Source Voltage + 20 Continuous Drain Current3, VGS @ 10V 7 Parameter Rating Drain-Source Voltage 30 AP2606AGY-HF Halogen-Free Product G D S Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is widely used for commercial-industrial applications. D D D D G S SOT-26

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - - 28 m Ω VGS=4.5V, ID=5A - - 42 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=5A - 10 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=5A - 6 9.6 nC Qgs Gate-Source Charge V DS=15V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3 - nC td(on) Turn-on Delay Time2 VDS=15V - 6 - ns tr Rise Time I D=1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 5- ns tf Fall Time V GS=10V - 3.5 - ns Ciss Input Capacitance V GS=0V - 460 740 pF Coss Output Capacitance V DS=25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 1.9 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=5A, VGS=0V, - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board t ≦ 10s ; 156℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP2606AGY-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th)(V) 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5 A T A =25 o C 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =7A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 10V 7.0V 6.0V 5.0V V G =4.0V I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 100 200 300 400 500 600 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 156℃/W t T 02468 1 0 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5A V DS =15V 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DCT A =25 o C Single Pulse td(on) tr td(off) tf VDS VGS 10% 90% 0.02 Operation in this area limited by RDS(ON)