AP2605GY-HF_14 A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Fast Switching Characteristic BVDSS -30V ▼ Lower Gate Charge RDS(ON) 80mΩ ▼ Small Footprint & Low Profile Package ID - 4A ▼ RoHS Compliant

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 1 AP2605GY-HF Rating -30 +20 0.016 Halogen-Free Product Continuous Drain Current3 -3.3 Pulsed Drain Current1 -20 -55 to 150 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range 200807082 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current -55 to 150 Linear Derating Factor Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is widely used for commercial-industrial applications. G D S D D D D G S SOT-26

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A - - 80 m Ω VGS=-4.5V, ID=-3A - - 120 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-5V, ID=-4A - 6 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS= +20V - - + 100 nA Qg Total Gate Charge2 ID=-4A - 5.5 8.8 nC Qgs Gate-Source Charge V DS=-24V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 2.6 - nC td(on) Turn-on Delay Time2 VDS=-15V - 7 - ns tr Rise Time I D=-1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 18 - ns tf Fall Time R D=15Ω -4- ns Ciss Input Capacitance V GS=0V - 400 640 pF Coss Output Capacitance V DS=-25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 30 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.6A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-4A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature I D =-4.2A T A =25 o C 0123456789 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -1 0V -7.0V -5.0V -4.5V V G =-3.0V 012345678 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -1 0V -7.0V -5.0V -4.5V V G =-3.0V 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -4.0A V G = -10V 0.5 1.5 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 105 3579 1 1 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -3.0 A T A =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fi g 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 02468 1 0 1 2 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) V DS =-24V I D =-4A 100 1000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 1ms 10ms 100ms DCT A =25 o C Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 156℃/W t T

Package Outline : SOT-26 Millimeters SYMBOLS MIN NOM MAX A 2.70 2.90 3.10 B 2.60 2.80 3.00 C 1.40 1.60 1.80 D 0.30 0.43 0.55 E 0.00 0.05 0.10 G I J L 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SOT-26 0.37REF 0.95REF 1.90REF ADVANCED POWER ELECTRONICS CORP. 0.12REF H 1.20REF Y5YY Part Number : Y5 D Date Code YY:2004,2008,2012… YY :2003,2007,2011… YY:2002,2006,2010… YY:2001,2005,2009… C B L L G E J I A H