AP25P15GI A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge BVDSS -140V ▼ Simple Drive Requirement RDS(ON) 95mΩ ▼ Fast Switching Characteristic ID -23A

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ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data and specifications subject to change without notice +20 -23 RoHS-compliant Product AP25P15GI Rating -140 -14.5 Pulsed Drain Current1 Thermal Data Parameter Storage Temperature Range -55 to 150 36.7Total Power Dissipation -80 -55 to 150 200810071 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Operating Junction Temperature Range G D S G D S TO-220CFM(I) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial- industrial through hole applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-1mA -140 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A - - 95 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-12A - 35 - S IDSS Drain-Source Leakage Current VDS=-120V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS= +20V - - + 100 nA Qg Total Gate Charge2 ID=-18A - 55 90 nC Qgs Gate-Source Charge V DS=-80V - 9 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 17 - nC td(on) Turn-on Delay Time2 VDS=-50V - 13 - ns tr Rise Time I D=-18A - 34 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 84 - ns tf Fall Time R D=2.8Ω -7 8- ns Ciss Input Capacitance V GS=0V - 5180 8300 pF Coss Output Capacitance V DS=-25V - 250 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 140 - pF Rg Gate Resistance f=1.0MHz - 3.2 4.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-12A, VGS=0V - - -1.3 V trr Reverse Recovery Time2 IS=-18A, VGS=0V, - 70 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 235 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -12 A T C =25 ℃ 0 4 8 1 21 62 02 4 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =2 5o C -10V - 7 .0V - 6 .0V - 5.0 V V G =-4. 0V 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -1 2A V G = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 0 4 8 12 16 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -10V -7.0V -6.0V -5.0V V G = -4.0V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP25P15GI Q VG -10V QGS QGD QG Charge 0 2 04 06 08 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) V DS = -8 0V I D = -1 8A 1000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off) tf VDS VGS 10% 90%