AP25N170I A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement VDS @ Tj,max. 280V ▼ Lower Gate Charge RDS(ON) 170mΩ ▼ Fast Switching Characteristics ID 19A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V3 A ID@TC=100℃ Drain Current, VGS @ 10V3 A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation W TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W Rthj-a 65 ℃/W Data & specifications subject to change without notice -55 to 150 Parameter +20 Storage Temperature Range Halogen-Free Product 201408121 31.2 Parameter Rating 250 -55 to 150 Maximum Thermal Resistance, Junction-ambient 1.92 AP25N170 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-220CFM package is widely preferred for all commercial- industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. G D S G D S TO-220CFM(I)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 250 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=5A - - 170 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance V DS=10V, ID=5A - 15 - S IDSS Drain-Source Leakage Current VDS=200V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=5A - 25 40 nC Qgs Gate-Source Charge V DS=200V - 6.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 6 - nC td(on) Turn-on Delay Time V DD=125V - 9 - ns tr Rise Time I D=5A - 20 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 1- ns tf Fall Time V GS=10V - 20 - ns Ciss Input Capacitance V GS=0V - 1500 2400 pF Coss Output Capacitance V DS=25V - 225 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF Rg Gate Resistance f=1.0MHz - 1.6 3.2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=5A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=5A, VGS=0V, - 140 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 800 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP25N170I 3.Ensure that the junction temperature does not exceed TJmax..

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS 0.4 0.8 1.2 1.6 2.4 2.8 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =5A V GS =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) I D =250uA I D =1mA 0 8 16 24 32 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V 6.0V V GS =5.0V 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V 7.0V 6.0V V GS =5.0V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Total Power Dissipation 400 800 1200 1600 2000 2400 0 40 80 120 160 200 240 280 320 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss0 0 8 16 24 32 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5A V DS =200V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 0 50 100 150 T C , Case Temperature ( o C ) PD , Power Dissipation (W) 02468 1 0 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =10V

I D , Drain Current (A) RDS(ON) (m T j =25 o C 6.0V 7.0V 8.0V 9.0V V G =10V 130 150 170 190 210 456789 1 0 T C , Case Temperature( o C) RDS(ON) (m Ω) V G =5.0V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 25N170 YWWSSS