AP25G45EM A-POWER | Alldatasheet
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Electronics Corp. BIPOLAR TRANSISTOR ▼ High Input Impedance VCE ▼ High Pick Current Capability ICP ▼ 4.5V Gate Drive ▼ S ▼ S ▼ S ▼ Strobe Flash Applications Absolute Maximum Ratings Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Min. Typ. Max. Units IGES uA ICES uA VCE(sat) V VGE(th) 0.35 1.2 V Qg 64.5 nC Qge nC Qgc nC td(on) 11.5 ns tr 24.5 ns td(off) 150 ns tf 3.3 µs Cies 2227 pF Coes 200 pF Cres pF RthJA ℃/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad. Data and specifications subject to change without notice V 2.5 200507032 VCC=225V V Gate-Emitter Voltage Gate-Emitter Charge Operating Junction Temperature Range -55 to 150 -55 to 150 W Parameter Storage Temperature Range Pulsed Collector Current Parameter Maximum Power Dissipation VGE ICP VGEP Pulsed Gate-Emitter Voltage PD@TC=25℃1 450 ± 6 150 ± 8 AP25G45EM Symbol VCE 450V 150A Rating Collector-Emitter Voltage Units V A Reverse Transfer Capacitance VCE=450V, VGE=0V VGE=4.5V, ICP=150A (Pulsed) VCE=VGE, IC=250uA IC=50A VCE=360V VGE=5V VCE=25V Test Conditions Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Leakage Current Collector-Emitter Leakage Current (Tj=25℃) VGE=± 6V, VCE=0V TSTG Turn-off Delay Time VGE=0V IC=50A RG=25Ω Rise Time TJ Gate-Collector Charge Turn-on Delay Time Thermal Resistance Junction-Ambient VGE=5V Fall Time Input Capacitance Output Capacitance f=1.0MHz G C E E E E G C C C C SO-8
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Collector Current v.s. Fig 4. Collector- Emitter Saturation Voltage Gate-Emitter Voltage v.s. Junction Temperature Fig 5. Gate Threshold Voltage Fig 6. Minimum Gate Drive Area v.s. Junction Temperature AP25G45EM 100 120 140 160 180 V CE , Collector-Emitter Voltage (V) ID , Drain Current (A) 4.5V 4.0V T A =25 o C VG=1.0V 5.0V 3.0V 2.0V 100 120 140 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) 4.5V 4.0V T A =150 o C VG=1.0V 5.0V 3.0V 2.0V 100 120 140 160 Junction Temperature ( o C) VCE(sat),Saturation Voltage(V) V GE =4.5V I C =130A I C =50A I C =100A 0.3 0.6 0.9 1.2 1.5 -50 100 150 Junction Temperature ( o C ) VGE(th) (V) 120 160 200 V GE , Gate-to-Emitter Voltage (V) ICP, Peak Collector Current (A) 120 160 V GE , Cate-Emitter Voltage (V) IC , Collector Current(A) V CE =4.5V 25 ℃ 70 ℃ 125 ℃ T A =150 ℃
Fig 7. Typical Capacitance Characterisitics Fig 8. Gate Charge Waveform Fig 9. Switching Time Test Circuit Fig 10. Switching Time Waveform Fig 11. Gate Charge Test Circuit Fig 12. Application Test Circuit AP25G45EM td(on) tr td(off) tf VCE VGE 10% 90% 300V TO THE OSCILLOSCOPE C G VCE VGE IC IG 1~3mA E VCM VCM = 300V CM =100uF ICP = 150A VG =5V CM RG Vtrig IGBT VG Flasher 100 1000 10000 VCE, Collector-Emitter Voltage (V) Capacitance (pF) f=1.0MHz Cies Coes Cres TO THE OSCILLOSCOPE C G E VCE VGE RG RC 225 V 120 150 Q G , Gate Charge (nC) VGE , Gate -Emitter Voltage (V) I CP=50A V CC=360V