AP2532GY

AP2532GY A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low Gate Charge N-CH BV DSS 30V ▼ Fast Switching Performance RDS(ON) 130mΩ ▼ Surface Mount Package ID 2.4A P-CH BV DSS -30V RDS(ON) 250mΩ Description ID -1.8A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25℃ Continuous Drain Current3 2.4 -1.8 A ID@TA=70℃ Continuous Drain Current3 1.9 -1.4 A IDM Pulsed Drain Current1 10 -10 A PD@TA=25℃ Total Power Dissipation 1.14 W Linear Derating Factor 0.01 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient3 110 ℃/W Data and specifications subject to change without notice Parameter 201018074-1/7 AP2532GY RoHS-compliant Product SOT-26 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is widely used for commercial surface mount applications.

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=1A - - 130 mΩ VGS=4.5V, ID=0.5A - - 250 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1.2 - 3 V gfs Forward Transconductance V DS=10V, ID=1A - 1.6 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=1.8A - 2.7 4.3 nC Qgs Gate-Source Charge V DS=10V - 0.9 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 1.2 - nC td(on) Turn-on Delay Time2 VDS=15V - 4.3 - ns tr Rise Time I D=1A - 10 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 12 - ns tf Fall Time R D=15Ω - 2.5 - ns Ciss Input Capacitance V GS=0V - 180 290 pF Coss Output Capacitance V DS=10V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.7 2.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=0.9A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=1.8A, VGS=0V - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC AP2532GY

Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance V GS=-10V, ID=-0.6A - - 250 mΩ VGS=-4.5V, ID=-0.3A - - 400 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1.2 - -3 V gfs Forward Transconductance V DS=-10V, ID=-1A - 1.7 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V ,VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=-1.2A - 2.5 4 nC Qgs Gate-Source Charge V DS=-10V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 1 - nC td(on) Turn-on Delay Time2 VDS=-15V - 6 - ns tr Rise Time I D=-0.6A - 9 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 18 - ns tf Fall Time R D=25Ω -4- ns Ciss Input Capacitance V GS=0V - 175 280 pF Coss Output Capacitance V DS=-10V - 63 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Rg Gate Resistance f=1.0MHz - 10 15 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage2 IS=-0.9A, VGS=0V - - -1.3 V trr Reverse Recovery Time IS=-1.2A, VGS=0V, - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 6 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP2532GY 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10 V 7.0 V 5.0 V 4.5 V V G = 3.0 V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C V G = 3.0 V 10 V 7.0 V 5.0 V 4.5 V 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 110 130 150 170 190 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = 0.5 A T A =25 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 0123456 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D = 1.8 A V DS =1 0V 100 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.02 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 180℃/W t T 0.01 td(on) tr td(off) tf VDS VGS 10% 90%

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP2532GY 0246 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C V G = - 3.0 V -1 0V - 7.0 V - 5.0 V - 4.5 V 0.6 0.9 1.2 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -0.6 A V G = -10 V 0.0 0.5 1.0 1.5 2.0 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 01234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -1 0V - 7.0 V - 5.0 V -4.5 V V G = - 3.0 V 120 160 200 240 280 320 360 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = - 0.3 A T A =25 o C 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0123456 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -1.2A V DS = -10V 100 1000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse Q VG -4.5V QGS QGD QG Charge 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 180℃/W t T 0.2 td(on) tr td(off) tf VDS VGS 10% 90%

Package Outline : SOT-26 Millimeters SYMBOLS MIN NOM MAX A 2.70 2.90 3.10 B 2.60 2.80 3.00 C 1.40 1.60 1.80 D 0.30 0.43 0.55 E 0.00 0.05 0.10 G I J L 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SOT-26 0.37REF 0.95REF 1.90REF ADVANCED POWER ELECTRONICS CORP. 0.12REF H 1.20REF YEXX Part Number D Date Code C B L L G E J I A H