AP2530GY A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low Gate Charge N-CH BV DSS 30V ▼ Low On-resistance RDS(ON) 72mΩ ▼ Surface Mount Package ID 3.3A ▼ RoHS Compliant P-CH BV DSS -30V RDS(ON) 150mΩ Description ID -2.3A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25℃ Continuous Drain Current3 3.3 -2.3 A ID@TA=70℃ Continuous Drain Current3 2.6 -1.8 A IDM Pulsed Drain Current1 10 -10 A PD@TA=25℃ Total Power Dissipation 1.14 W Linear Derating Factor 0.01 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 110 ℃/W Data and specifications subject to change without notice Parameter 200425051-1/7 AP2530GY Pb Free Plating Product SOT-26 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications.

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=3A - - 72 mΩ VGS=4.5V, ID=2A - - 125 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=5V, ID=3A - 4 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=3A - 3 5 nC Qgs Gate-Source Charge V DS=25V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 2 - nC td(on) Turn-on Delay Time2 VDS=15V - 6 - ns tr Rise Time I D=1A - 8 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 11 - ns tf Fall Time R D=15Ω -2- ns Ciss Input Capacitance V GS=0V - 170 270 pF Coss Output Capacitance V DS=25V - 50 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 35 - pF Rg Gate Resistance f=1.0MHz - 0.5 0.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=0.9A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=3A, VGS=0V - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC AP2530GY

Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=-10V, ID=-2A - - 150 mΩ VGS=-4.5V, ID=-1A - - 280 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-5V, ID=-2A - 2 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V ,VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=-2A - 3 5 nC Qgs Gate-Source Charge V DS=-25V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 2 - nC td(on) Turn-on Delay Time2 VDS=-15V - 6 - ns tr Rise Time I D=-1A - 8 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-5V - 17 - ns tf Fall Time R D=15Ω -4- ns Ciss Input Capacitance V GS=0V - 150 240 pF Coss Output Capacitance V DS=-25V - 50 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Rg Gate Resistance f=1.0MHz - 8 12 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage2 IS=-0.9A, VGS=0V - - -1.3 V trr Reverse Recovery Time IS=2A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP2530GY 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10 V 7.0 V 5.0 V 4.5 V V G = 3.0 V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150 o C V G = 3.0 V 10 V 7.0 V 5.0 V 4.5 V 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =3A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 130 170 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2A T A =25 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 012345 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =3A V DS =2 5V 100 1000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0246 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (R thja) 0.02 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 180℃/W t T 0.01

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP2530GY 0246 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C V G = - 3.0 V -1 0V - 7.0 V - 5.0 V - 4.5 V 0.6 0.9 1.2 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =- 2A V G = -10 V 0.0 0.5 1.0 1.5 2.0 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0246 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -1 0V - 7.0 V - 5.0 V -4.5 V V G = - 3.0 V 100 200 300 400 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =- 1A T A =25 o C 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 012345 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-2A V DS =-25V 100 1000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0246 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS =-5V 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse Q VG 4.5V QGS QGD QG Charge 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 180℃/W t T 0.2