AP2530AGY-HF

AP2530AGY-HF A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low Gate Charge N-CH BV DSS 30V ▼ Fast Switching Performance RDS(ON) 72mΩ ▼ Surface Mount Package ID 3.3A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -30V RDS(ON) 150mΩ Description ID -2.3A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage + 20 + 20 V ID@TA=25℃ Continuous Drain Current3 3.3 -2.3 A ID@TA=70℃ Continuous Drain Current3 2.7 -1.8 A IDM Pulsed Drain Current1 12 -10 A PD@TA=25℃ Total Power Dissipation 1.136 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 110 ℃/W Data and specifications subject to change without notice 201101171 Parameter AP2530AGY-HF Halogen-Free Product SOT-26 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is widely used for commercial surface mount applications.

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=3A - - 72 m Ω VGS=4.5V, ID=2A - - 135 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=5V, ID=3A - 4.6 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 1 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=3A - 2.8 4.5 nC Qgs Gate-Source Charge V DS=15V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 1.4 - nC td(on) Turn-on Delay Time2 VDS=15V - 5.5 - ns tr Rise Time I D=1A - 6.5 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 0- ns tf Fall Time V GS=10V - 2 - ns Ciss Input Capacitance V GS=0V - 200 320 pF Coss Output Capacitance V DS=15V - 60 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Rg Gate Resistance f=1.0MHz - 1 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=0.9A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=3A, VGS=0V - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC AP2530AGY-HF

Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-2A - - 150 m Ω VGS=-4.5V, ID=-1A - - 280 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-5V, ID=-2A - 2.9 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=-2A - 2.5 4 nC Qgs Gate-Source Charge V DS=-15V - 0.8 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 1.2 - nC td(on) Turn-on Delay Time2 VDS=-15V - 5.5 - ns tr Rise Time I D=-1A - 8 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 7- ns tf Fall Time V GS=-10V - 3 - ns Ciss Input Capacitance V GS=0V - 160 260 pF Coss Output Capacitance V DS=-15V - 60 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Rg Gate Resistance f=1.0MHz - 8 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=0.9A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=2A, VGS=0V - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

3.3A Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.3 2.68 13.2 1.136 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =3A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 100 110 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 012345 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =3A V DS =1 5V 100 200 300 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.02 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 180℃/W t T 0.01 td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -6.0V -5.0V V G = -4.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =- 2A V G = -10 V 0.0 1.0 2.0 3.0 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -10V -7.0V -6.0V -5.0V V G = - 4.0 V 100 120 140 160 180 200 220 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =-1A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) I D = -1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 012345 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -2A V DS = -15V 160 240 320 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse Q VG -4.5V QGS QGD QG Charge 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 180℃/W t T 0.2 td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)