AP2451GY

AP2451GY A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼▼▼▼ Capable of 2.5V gate drive N-CH BV DSS 20V ▼▼▼▼ Lower on-resistance RDS(ON) 37mΩ ▼▼▼▼ Surface mount package ID 5A P-CH BV DSS -20V RDS(ON) 75mΩ Description ID -3.7A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 20 -20 V VGS Gate-Source Voltage ±12 ±12 V ID@TA=25℃ Continuous Drain Current3 5 -3.7 A ID@TA=70℃ Continuous Drain Current3 4 -3 A IDM Pulsed Drain Current1 20 -20 A PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Data and specifications subject to change without notice Parameter 200119051 Thermal Data AP2451GY Pb Free Plating Product Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. 2928-8

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6A - - 32 mΩ VGS=4.5V, ID=5A - - 37 mΩ VGS=2.5V, ID=3A - - 55 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance V DS=5V, ID=5A - 13 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=±12V - - ±100 nA Qg Total Gate Charge2 ID=5A - 9 15 nC Qgs Gate-Source Charge V DS=16V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=10V - 9 - ns tr Rise Time I D=1A - 10 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 16 - ns tf Fall Time R D=10Ω -5- ns Ciss Input Capacitance V GS=0V - 620 990 pF Coss Output Capacitance V DS=20V - 120 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=5A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 11 - nC AP2451GY

Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - 0.01 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=-10V, ID=-4A - - 57 mΩ VGS=-4.5V, ID=-3A - - 75 mΩ VGS=-2.5V, ID=-1A - - 105 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.5 - -1.2 V gfs Forward Transconductance V DS=-5V, ID=-3A - 10 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-16V ,VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=±12V - - ±100 nA Qg Total Gate Charge2 ID=-3A - 11 18 nC Qgs Gate-Source Charge V DS=-16V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=-10V - 10 - ns tr Rise Time I D=-1A - 16 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-5V - 26 - ns tf Fall Time R D=10Ω -1 6- ns Ciss Input Capacitance V GS=0V - 740 1180 pF Coss Output Capacitance V DS=-20V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Rg Gate Resistance f=1.0MHz - 6.6 10 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage2 IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=3A, VGS=0V, - 29 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 155℃/W at steady state.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP2451GY 0123 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 5.0 V 4.5 V 3.5 V 2.5 V V G = 1.5 V 0123 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150 o C V G = 1.5 V 5.0 V 4.5 V 3.5 V 2.5 V 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =5A V G =4.5V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.3 0.7 1.1 1.5 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) (V) 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =3A T A =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 0 4 8 12 16 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5A V DS =1 6V 100 1000 1 5 9 1 31 72 12 5 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0246 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =155oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP2451GY 01234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C V G = - 1.5 V -5.0 V - 4.5 V - 3.5 V - 2.5 V 0.6 0.9 1.2 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =- 3A V G = -4.5 V 0.3 0.7 1.1 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 01234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -5.0 V - 4.5 V - 3.5 V - 2.5 V V G = - 1.5 V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =- 1A T A =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG -4.5V QGS QGD QG Charge Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-3A V DS =-16V 100 1000 159 1 3 1 7 2 1 2 5 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0246 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS =-5V 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=155oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor =0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse