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Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Bottom Exposed DFN BVDSS 30V ▼ Low On-resistance RDS(ON) 12mΩ ▼ Small Size & Lower Profile ID 13A ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TA=25℃ Continuous Drain Current3, VGS @ 10V A ID@TA=70℃ Continuous Drain Current3, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Symbol Rating Units Rthj-a 40 ℃/W Data & specifications subject to change without notice -55 to 150 +20 Thermal Data 201208212 Parameter Maximum Thermal Resistance, Junction-ambient3 Halogen-Free Product -55 to 150 AP2430GN3-HF Rating 10.4 3.1 Advanced Power MOSFETs from APEC provide the designe r with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN 3x3 package is well suited for low current DC/DC applications. DFN 3x3 D1D2

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - 9.7 12 m Ω VGS=4.5V, ID=6A - 14.4 18 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 1.4 3 V gfs Forward Transconductance V DS=10V, ID=8A - 15 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=10A - 14 22 nC Qgs Gate-Source Charge V DS=15V - 3.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 7.5 - nC td(on) Turn-on Delay Time V DS=15V - 10 - ns tr Rise Time I D=1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 8- ns tf Fall Time V GS=10V - 8 - ns Ciss Input Capacitance V GS=0V - 1080 1720 pF Coss Output Capacitance V DS=15V - 195 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Rg Gate Resistance f=1.0MHz 0.85 1.7 3.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=10A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=10A, VGS=0V, - 22 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <5sec ; 100oC/W at steady state. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP2430GN3-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =8A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =6A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 0.01 0.1 100 0.01 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=100oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 8 16 24 32 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =10A V DS =15V 400 800 1200 1600 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j =-40 o C 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)