AP2428GN3

AP2428GN3_14 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Bottom Exposed DFN BVDSS 30V ▼ Low On-resistance RDS(ON) 27mΩ ▼ Lower Profile ID 5.5A Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TA=25℃ Continuous Drain Current3 A ID@TA=70℃ Continuous Drain Current3 A IDM Pulsed Drain Current1 A PD@TA=25℃ Total Power Dissipation 1.25 W Linear Derating Factor 0.01 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 100 ℃/W Data and specifications subject to change without notice 201120072 Parameter AP2428GN3 RoHS-compliant Product ±10 5.5 4.4 DFN3*3 G1S1G2 D1D2

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS /ΔT j Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=5A - - 27 mΩ VGS=2.5V, ID=3A - - 33 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.3 - 1.2 V gfs Forward Transconductance V DS=5V, ID=5A - 5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=±10V - - ±30 uA Qg Total Gate Charge2 ID=5A - 11 18 nC Qgs Gate-Source Charge V DS=25V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3.8 - nC td(on) Turn-on Delay Time2 VDS=15V - 3.5 - ns tr Rise Time I D=1A - 8.5 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 25 - ns tf Fall Time R D=15Ω - 4.5 - ns Ciss Input Capacitance V GS=0V - 545 870 pF Coss Output Capacitance V DS=25V - 110 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=5A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 21 - nC 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted FR4 board, t≦5s. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT AP2428GN3

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. On-Resistance vs. Reverse Diode Drain Current 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C V G =2.5V 4.0V 5.0V 4.5V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 4.0V V G =2.5V 4.5V 5.0V 0 0.4 0.8 1.2 1.6 V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o CT j =150 o C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =4.5V I D =5A 12345 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =3A T A =25 o C 3.5V 3.5V 20.0 22.0 24.0 26.0 28.0 30.0 32.0 0 4 8 12 16 20 I D , Drain Current (A) RDS(ON) (mΩ) V GS =4.5V V GS =2.5V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP2428GN3 01 0 2 0 3 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V V DS =20V V DS =25V I D =5A 100 1000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja = 180℃/W 0.02 Q VG 4.5V QGS QGD QG Charge 0123 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V

Package Outline : T/DFN(3*3) Millimeters MIN NOM MAX DFN 0.80 0.85 0.90 TDFN 0.70 0.75 0.80 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : T/DFN(3*3) SYMBOLS ADVANCED POWER ELECTRONICS CORP. A Foot print Date Code (YWWS) Y：Last Digit Of The Year WW：Week S：Sequence 2428 YWWS Part Number 0.47 0.23 1.70 0.23