AP2422GY A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼▼▼▼ Capable of 2.5V gate drive BVDSS 30V ▼▼▼▼ Lower on-resistance RDS(ON) 40mΩ ▼▼▼▼ Surface mount package ID 4.8A ▼▼▼▼ RoHS compliant

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Parameter Rating Drain-Source Voltage 30 Gate-Source Voltage ±12 Continuous Drain Current 3 4.8 Continuous Drain Current3 3.8 Pulsed Drain Current1 20 Total Power Dissipation 1.39 Linear Derating Factor 0.01 Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 200816053-1/4 AP2422GY Pb Free Plating Product Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. 2928-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=5A - - 32 mΩ VGS=4.5V, ID=4A - - 40 mΩ VGS=2.5V, ID=2A - - 60 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance V DS=5V, ID=4A - 9 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=±12V - - ±100 nA Qg Total Gate Charge2 ID=4A - 3 5 nC Qgs Gate-Source Charge V DS=25V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=15V - 10 - ns tr Rise Time I D=1A - 11 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=5V - 17 - ns tf Fall Time R D=15Ω -5- ns Ciss Input Capacitance V GS=0V - 480 770 pF Coss Output Capacitance V DS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 1.5 2.3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.1A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=4A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 155℃/W at steady state. AP2422GY

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) V G = 1.5 V 5.0 V 4.5 V 3.5 V 2.5 V T A =25 o C 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 5.0 V 4.5 V 3.5 V 2.5 V V G = 1.5 V 02468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =2A T A =25 ℃℃℃℃ 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =4A V G = 4.5 V 0.0 0.6 1.2 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP2422GY Q VG 4.5V QGS QGD QG Charge 0 5 10 15 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =4A V DS =1 5V V DS =2 0V V DS =2 5V 100 1000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 01234 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=155oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse