AP2310AGN-HF A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 65V ▼ Small Package Outline RDS(ON) 80mΩ ▼ Surface Mount Device ID 3A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 90 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 1.38 -55 to 150 Operating Junction Temperature Range -55 to 150 Continuous Drain Current3, VGS @ 10V 2.3 Pulsed Drain Current1 12 Gate-Source Voltage + 20 Continuous Drain Current3, VGS @ 10V 3 Parameter Rating Drain-Source Voltage 65 AP2310AGN-HF Halogen-Free Product 201206111 G D S D G S SOT-23 AP2310A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 65 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=3A - 62 80 m Ω VGS=4.5V, ID=2A - 88 120 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 1.7 3 V gfs Forward Transconductance V DS=10V, ID=3A - 7 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=3A - 6 9.6 nC Qgs Gate-Source Charge V DS=30V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3.5 - nC td(on) Turn-on Delay Time V DS=30V - 5 - ns tr Rise Time I D=1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 7- ns tf Fall Time V GS=10V - 3.5 - ns Ciss Input Capacitance V GS=0V - 460 740 pF Coss Output Capacitance V DS=25V - 35 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 30 - pF Rg Gate Resistance f=1.0MHz - 1.4 2.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=3A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 19 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP2310AGN-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =3A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) 100 110 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = 2A T A = 25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Maximum Continuous Drain Current Fig 12. Gate Charge Waveform v.s. Ambient Temperature Q VG 4.5V QGS QGD QG Charge 048 1 2 1 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =3 A V DS =30V 100 200 300 400 500 600 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 100 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃/W t T 0.02 Operation in this area limited by RDS(ON) 0.8 1.6 2.4 3.2 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)