AP2309N A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS -30V ▼ ▼ ▼ ▼ Small Package Outline RDS(ON) 75mΩ ▼ ▼ ▼ ▼ Surface Mount Device ID - 3.7A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Data and specifications subject to change without notice 200513041 AP2309N Rating - 30 ±20 - 3.7 0.01 1.38 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 - 3 Pulsed Drain Current1,2 -12 Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range -55 to 150 Linear Derating Factor Thermal Data The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S D G S SOT-23

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=-10V, ID=-3A - - 75 mΩ VGS=-4.5V, ID=-2.6A - - 120 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-3A - 5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=55oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=-3A - 5 8 nC Qgs Gate-Source Charge V DS=-24V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 3 - nC td(on) Turn-on Delay Time2 VDS=-15V - 8 - ns tr Rise Time I D=-1A - 5 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 20 - ns tf Fall Time R D=15Ω -7- ns Ciss Input Capacitance V GS=0V - 412 660 pF Coss Output Capacitance V DS=-25V - 91 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 62 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-3A, VGS=0V, - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -5.0V -4.5V V G = - 3 .0V 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -5.0V -4.5V V G = - 3 .0V 105 3579 1 1 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =-2.6A T A =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =3A V G =10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.7 0.9 1.1 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃℃℃℃/W t T td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 02468 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = - 3 A V DS = -24V 100 1000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss