AP2308GEN

AP2308GEN A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Capable of 2.5V gate drive BVDSS 20V ▼ ▼ ▼ ▼ Lower on-resistance RDS(ON) 600mΩ ▼▼▼▼ 2KV ESD Capability ID 1.2A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 1.38 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.01 Continuous Drain Current3, VGS @ 4.5V 1 Pulsed Drain Current1,2 5 Gate-Source Voltage ±6 Continuous Drain Current3, VGS @ 4.5V 1.2 Parameter Rating Drain-Source Voltage 20 200809041 AP2308GEN Pb Free Plating Product D G S SOT-23 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=4.5V, ID=1.2A - - 600 mΩ VGS=2.5V, ID=0.5A - - 850 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance V DS=5V, ID=1.2A - 1 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=±6V - - ±10 uA Qg Total Gate Charge2 ID=1.2A - 1.2 2 nC Qgs Gate-Source Charge V DS=16V - 0.4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 0.3 - nC td(on) Turn-on Delay Time2 VDS=10V - 17 - ns tr Rise Time I D=1.2A - 36 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=5V - 76 - ns tf Fall Time R D=10Ω -7 3- ns Ciss Input Capacitance V GS=0V - 37 60 pF Coss Output Capacitance V DS=10V - 17 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 13 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. AP2308GEN

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 300 400 500 600 700 12345 V GS , Gate-to-Source Voltage (V) RDSON (m ΩΩΩΩ) I D =0.5A T A =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1.2A V G =4.5V 0.0 0.2 0.4 0.6 0.8 1.0 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 1.0 2.0 3.0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 5.0V 4.5V 3.5V 2.5V V G = 1 .5V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 1.0 2.0 3.0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 5.0V 4.5V 3.5V 2.5V V G = 1 .5V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit AP2308GEN 100 13579 1 1 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 0.5 1 1.5 2 2.5 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1.2A V DS =10V V DS =12V V DS =16V td(on) tr td(off)tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃℃℃℃/W t T 0.01 0.1 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC