AP2305N A-POWER | Alldatasheet

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P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -20V ▼ Small Package Outline RDS(ON) 65mΩ ▼ Surface Mount Device ID - 4.2A

Description

V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG TJ Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient3 Max. ℃/W Data and specifications subject to change without notice -55 to 150 Linear Derating Factor Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range 1.38 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 -3.4 Pulsed Drain Current1,2 -10 2004280301 AP2305N Rating - 20 ± 12 -4.2 0.01 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S D G S SOT-23

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA -0.1 V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-4.5A mΩ VGS=-4.5V, ID=-4.2A mΩ VGS=-2.5V, ID=-2.0A 100 mΩ VGS=-1.8V, ID=-1.0A 250 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 V gfs Forward Transconductance VDS=-5V, ID=-2.8A S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V uA Drain-Source Leakage Current (Tj=55oC) VDS=-16V, VGS=0V -10 uA IGSS Gate-Source Leakage VGS= nA Qg Total Gate Charge2 ID=-4.2A 10.6 nC Qgs Gate-Source Charge VDS=-16V 2.32 nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V 3.68 nC td(on) Turn-on Delay Time2 VDS=-15V 5.9 ns tr Rise Time ID=-4.2A 3.6 ns td(off) Turn-off Delay Time RG=6Ω,VGS=-10V 32.4 ns tf Fall Time RD=3.6Ω 2.6 ns Ciss Input Capacitance VGS=0V 740 pF Coss Output Capacitance VDS=-15V 167 pF Crss Reverse Transfer Capacitance f=1.0MHz 126 pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.2A, VGS=0V -1.2 V trr Reverse Recovery Time IS=-4.2A, VGS=0V, 27.7 ns Qrr Reverse Recovery Charge dI/dt=100A/µs nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. ± 12V ±100

65mΩ Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.6 0.8 1.2 1.4 1.6 1.8 -50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -4.2A V GS = -4.5V -V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) -4.0V T A =25 o C -5.0V -3.0V V G = -2.0V -V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) V G = -2.0V -4.0V -5.0V -3.0V T A = 1 5 0 o C 0.01 0.1 100 0.4 0.8 1.2 1.6 -V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o C T j =150 o C 0.5 1.5 -50 100 150 T j , Junction Temperature ( o C) VGS(th) (V) 120 160 V GS , Gate-to-Source Voltage (V) RDS(ON) (Ω Ω Ω I D =-4.2A T A =25 o C

65mΩ Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D = -4.2A V DS = -16V 0.01 0.1 100 0.1 100 V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja = 270℃ ℃/W 0.75 x RATED VDS TO THE OSCILLOSCOPE -10 V D G S VDS VGS RG RD 0.8 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS ID IG -1~-3mA 100 1000 10000 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss