AP2305GN A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS -20V ▼ ▼ ▼ ▼ Small Package Outline RDS(ON) 65mΩ ▼ ▼ ▼ ▼ Surface Mount Device ID - 4.2A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Data and specifications subject to change without notice Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current -55 to 150 Linear Derating Factor 1.38 -55 to 150 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Continuous Drain Current3 -3.4 Pulsed Drain Current1,2 -10 200509032 AP2305GN Rating - 20 ± 12 -4.2 0.01 Pb Free Plating Product The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S D G S SOT-23

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 -V / ℃ RDS(ON) Static Drain-Source On-Resistance V GS=-10V, ID=-4.5A - - 53 mΩ VGS=-4.5V, ID=-4.2A - - 65 mΩ VGS=-2.5V, ID=-2.0A - - 100 mΩ VGS=-1.8V, ID=-1.0A - - 250 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.5 - - V gfs Forward Transconductance V DS=-5V, ID=-2.8A - 9 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=55oC) VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=-4.2A - 10.6 - nC Qgs Gate-Source Charge V DS=-16V - 2.32 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 3.68 - nC td(on) Turn-on Delay Time2 VDS=-15V - 5.9 - ns tr Rise Time I D=-4.2A - 3.6 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=-10V - 32.4 - ns tf Fall Time R D=3.6Ω - 2.6 - ns Ciss Input Capacitance V GS=0V - 740 - pF Coss Output Capacitance V DS=-15V - 167 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 126 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-4.2A, VGS=0V, - 27.7 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 22 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. ± 12V ±100

65mΩ Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.01E+08 Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -4.2A V GS = -4.5V 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -4.0V T A =25 o C -5.0V -3.0V V G = -2.0V 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) V G = -2.0V -4.0V -5.0V -3.0V T A =150 o C 0.01 0.1 100 0 0.4 0.8 1.2 1.6 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.5 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) 120 160 0123456 -V GS , Gate-to-Source Voltage (V) RDS(ON) (ΩΩΩΩ) I D =-4.2A T A =25 o C

65mΩ Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit 0 5 10 15 20 25 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -4.2A V DS = -16V 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja = 270℃℃℃℃/W 0.75 x RATED VDS TO THE OSCILLOSCOPE -10 V D G S VDS VGS RG RD 0.8 x RATED VDS TO THE OSCILLOSCOPED G S VDS VGS IDIG -1~-3mA 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss